Carrier Passivation in Heavily Doped GaAs:Be by Hydrogen Plasma (<Special Issue> Plasma Processing)

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概要

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• The electrical property around the surface of a heavily Be-doped p^+ GaAs layer exposed to hydrogen plasma has been investigated. The resistance around the surface has been made over six orders of magnitude larger by a 150 W and 10 min plasma exposure. Sheet carrier measurement with step etching has shown that the depth of the passivated front proceeds by diffusion. The time dependence of carrier removal has been found to have three distinct regions including a plateau. These regions have been explained by a 50 nm thick highly resistive layer which is formed within the first 1 minute during the plasma treatment prior to passivation due to hydrogen diffusion.

• 社団法人応用物理学会の論文
• 1994-07-30

著者

• Obara Masao

  Toshiba R & D Center

• Nozu Tetsuro

  Toshiba R & D Center

関連論文

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• Highly Reproducible Fabrication Technology for Passivated AlGaAs/GaAs Heterojunction Bipolar Transistors with Pt/Ti/Pt/Au Base Electrodes
• Changes in Collector and Base Currents for AlGaAs/GaAs Heterojunction Bipolar Transistors
• Ultra-Low Resistance Base Ohmic Contact with Pt/Ti/Pt/Au for High-f_ AlGaAs/GaAs Heterojunction Bipolar Tramsistors
• Carrier Passivation in Heavily Doped GaAs:Be by Hydrogen Plasma ( Plasma Processing)
• Negative Transconductance in AlGaAs/GaAs Heterojunction Bipolar Transistors

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