Thermal Runaway Tolerance in Double-Heterojunction Bipolar Transistors

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概要

• 論文の詳細を見る

• On the double-heterojunction bipolar transistor (DHBT) with a narrow band-gap base, collector current is strongly impeded at a high current level where the base-pushout effect occurs. This phenomenon was studied in conjunction with the thermal stability of transistors. The experimental comparison of Si/SiGe/Si-DHBT with a Si bipolar junction transistor (Si-BJT) confirmed that SiGe-DHBTs are more stable with regard to thermal runaway than Si-BJTs.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Morizuka Kouhei

  Toshiba Research and Development Center

• Hidaka Osamu

  Toshiba Research And Development Center

• Mochizuki Hiroshi

  Toshiba Research and Development Center

関連論文

• High F_ltmaxgt AlGaAs/GaAs HBTs with Pt/Ti/Pt/Au base contacts for DC to 40 GHz Broadband Amplifiers
• Thermal Runaway Tolerance in Double-Heterojunction Bipolar Transistors
• Donor Levels in Si-Doped AlGaAs Grown by MBE

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