Tsuda Kunio | Toshiba Corporation, R&D Center, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan
スポンサーリンク
概要
- Tsuda Kunioの詳細を見る
- 同名の論文著者
- Toshiba Corporation, R&D Center, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japanの論文著者
関連著者
-
Tsuda Kunio
Toshiba Research and Development Center
-
Tsuda Kunio
Toshiba Corporation, R&D Center, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan
-
Sugiyama Takatoshi
Wireless Labortories Ntt Docomo Inc.
-
Obara M
Laser Science Group The Institute Of Physical And Chemical Research (riken):(present Address)departm
-
Sugiyama Tohru
Toshiba Research and Development Center
-
Kuriyama Yasuhiko
Toshiba Research and Development Center
-
Iizuka Norio
Toshiba Research and Development Center
-
Morizuka Kouhei
Toshiba Research and Development Center
-
Obara Masao
Toshiba Research and Development Center
-
Sugiyama T
Wireless Labortories Ntt Docomo Inc.
-
Tsuda K
Matsushita Electric Industrial Co. Ltd. Moriguchi‐shi Jpn
-
Obara Masao
Toshiba R & D Center
-
Omura Ichiro
Toshiba Corporation
-
Morizuka K
Toshiba Research And Development Center
-
Kuriyama Y
Toshiba Corp. Kawasaki‐shi Jpn
-
Sugiyama Tsunetoshi
Department Of Applied Physics Tokyo University Of Agriculture And Technology:(present Address) Depar
-
Kuraguchi Masahiko
Toshiba Corporation, R&D Center, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan
-
Saito Wataru
Toshiba Corporation, Semiconductor Company, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan
-
Takada Yoshiharu
Toshiba Corporation, R&D Center, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan
-
Ogura Tsuneo
Toshiba Corporation, Semiconductor Company, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan
-
Takada Yoshiharu
Toshiba Corporation, R&D Center, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan
-
Omura Ichiro
Toshiba Corporation, Semiconductor Company, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan
著作論文
- High F_ltmaxgt AlGaAs/GaAs HBTs with Pt/Ti/Pt/Au base contacts for DC to 40 GHz Broadband Amplifiers
- Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications