Reflection High-Energy Electron Diffraction Oscillation during CaF_2 Growth on Si(111) by Partially Ionized Beam Epitaxy
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概要
- 論文の詳細を見る
We have observed reflection high-energy electron diffraction (RHEED) intensity oscillation in the growth of single-crystalline CaF_2 on Si(111) by partially ionized beam epitaxy at relatively low growth temperature (440℃). During and after the growth, the RHEED pattern of the CaF_2 shows single-crystalline nature using this epitaxy technique, whereas polycrystalline CaF_2 is grown without ionization and acceleration at the same temperature level. In the high-temperature range (>600℃), although single-crystalline CaF_2 is obtained without acceleration, RHEED oscillation is not observed during the growth.
- 社団法人応用物理学会の論文
- 1993-02-15
著者
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WATANABE Masahiro
Department of Information Processing, Tokyo Institute of Technology
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Asada Masahiro
Department of Neurosurgery, Chibune Hospital
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Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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SUZUKI Nobuhiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Suzuki Nobuhiro
The Faculty Of Engineering Tokyo Institute Of Technology
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Suzuki N
Corporate Research & Development Center Toshiba Corporation
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Suzuki N
Hitachi Ltd. Tokyo Jpn
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Suzuki Nobuhiro
Department Of Agricultural And Resource Economics Faculty Of Agriculture Kyushu University
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Watanabe Masahiro
Department Of Anatomy Hokkaido University School Of Medicine
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Watanabe Masahiro
Department Of Agricultural Chemistry Faculty Of Agriculture The University Of Tokyo
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