Observation of Terahertz Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes Intergrated with Patch Antenna
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-08-15
著者
-
Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Oguma Y
Tokyo Inst. Technol. Yokohama Jpn
-
SASHINAKA Nobuo
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
OGUMA Yukio
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Sashinaka N
Tokyo Inst. Technol. Tokyo Jpn
関連論文
- Cervical Epidural Abscess Presenting with Brown-Sequard Syndrome in a Patient with Type 2 Diabetes
- Emission Energy Shift in GaInAs/GaInAsP Strained Quantum-Box Structures Due to 0-Dimensional Quantum-Box Effect
- Cerebellopontine Angle Ependymoma with Internal Auditory Canal Enlargement and Pineal Extension : Case Report
- Subependymoma in the Lateral Ventricle Incidentally Detected by Routine Brain Examination : Case Report
- Metal (CoSi_2)/Insulator (CaF_2) Hot Electron Transistor Fabricated by Electron-Beam Lithography on a Si Substrate
- Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal (CoSi_2)/Insulator (CaF_2) Heterostructures and Influence of Parasitic Circuit Elements
- Quantum Interference of Electron Wave in Metal (CoSi_2)/Insulator (CaF_2) Resonant Tunneling Hot Electron Transistor Structure
- Metal(CoSi_2)/Insulator(CaF_2) Resonant Tunneling Diode
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
- The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
- Intraband Relaxation Time in Compressive-Strained Quantum-Well Lasers
- Advantage of Strained Quantum Wire Lasers
- Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate
- 35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate
- Fabrication and Characteristics of a Field Effect Transistor Using CdF_2/CaF_2 Heterostructures on a Si Substrate
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- Resonant Tunneling Diodes in Si/CaF_2 Heterostructures Grown by Molecular Beam Epitaxy
- Theoretical Gain of Quantum-Well Wire Lasers
- A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transister on Separation-by-Implanted-Oxygen Substrate
- Analysis of the Influence of Carrier Scattering in the Channel of a Metal/Insulator Tunneling Field Effect Transistor
- Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon
- Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure
- Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
- Reflection High-Energy Electron Diffraction Oscillation during CaF_2 Growth on Si(111) by Partially Ionized Beam Epitaxy
- Postpartum subarachnoid hemorrhage due to Moyamoya disease associated with renal artery stenosis
- Observation of Terahertz Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes Intergrated with Patch Antenna
- Terahertz Response with Gradual Change from Square-Law Detection to Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes
- Formation of Silicon and Cobalt Silicide Nanoparticles in CaF_2
- Preliminary Experiment on Direct Media Conversion from a 1.55 μm Optical Signal to a Sub-Terahertz Wave Signal Using Photon-Generated Free Carriers
- Reduction of Electrical Resistance of Nanometer-Thick CoSi 2 Film on CaF 2 by Pseudomorphic Growth of CaF 2 on Si(111)
- Suppression of Leakage Current of CdF2/CaF2 Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy
- Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
- Observation of Terahertz Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes Integrated with Patch Antenna
- Spectral Characteristics of Linewidth Enhancement Factor $\alpha$ of Multidimensional Quantum Wells
- A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transistor on Separation-by-Implanted-Oxygen Substrate