Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-08-05
著者
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Arai Shigehisa
Department Of Physical Electronics Tokyo Institute Of Technology
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Asada Masahiro
Department of Neurosurgery, Chibune Hospital
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Asada Masahiro
Department Of Physical Electronics Tokyo Institute Of Technology
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Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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SUEMATSU Yasuharu
Department of Physical Electronics, Tokyo Institute of Technology
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STUBKJAER Kristian
Department of Physical Electronics, Tokyo Institute of Technology
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Suematsu Yasuharu
Department Of Physical Electronics Tokyo Institute Of Technology
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Suematsu Yasuharu
Department Of Electronic Engineering Kohgakuin University
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Stubkjaer Kristian
Department Of Physical Electronics Tokyo Institute Of Technology
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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- Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH_4/H_2-Reactive Ion Etching
- GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/Semiconductor Bragg Reflectors
- Distributed Reflector Lasers with First-Order Vertical Grating and Second-Order Bragg Reflectors
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