Single Transverse Mode Operation of Terraced Substrate GaInAsP/InP Lasers at 1.3μm Wavelength
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概要
- 論文の詳細を見る
GaInAsP/InP terraced substrate (TS) lasers (λ=1.3μm) have been fabricated and stabilized single transverse mode operation has been demonstrated. The wafers were prepared by a single-step LPE growth on (100) n-InP terraced substrates which was terraced along <011> orientation. Pulsed threshold current was less than 50 mA at room temperature. Single transverse and longitudinal mode operation was obtained up to 2.8 times the threshold. Cw operation was also achieved at room temperatures.
- 社団法人応用物理学会の論文
- 1980-11-05
著者
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SUEMATSU Yasuharu
Department of Physical Electronics, Tokyo Institute of Technology
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Suematsu Yasuharu
Department Of Physical Electronics Tokyo Institute Of Technology
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Suematsu Yasuharu
Department Of Electronic Engineering Kohgakuin University
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Wakao Kiyohide
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Moriki Kazunori
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics
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KITAMURA Mitsuhiro
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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Kitamura Mitsuhiro
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology:(present) C
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IGA Kenichi
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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