A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transistor on Separation-by-Implanted-Oxygen Substrate
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概要
- 論文の詳細を見る
A 25-nm-long channel metal-gate PtSi Schottky source/drain metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on a separation-by-implanted-oxygen (SIMOX) substrate was demonstrated. The drain current and transconductance were 293 $\mu$A/$\mu$m and 431 mS/mm, respectively.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2000-08-15
著者
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Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Saitoh Masayuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Itoh Atsushi
Department Of Applied Chemistry Tokai University
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Itoh Atsushi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Saitoh Masayuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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