Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-02-01
著者
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai S
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Physical Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
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WATANABE Masahiro
Department of Information Processing, Tokyo Institute of Technology
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Asada Masahiro
Department of Neurosurgery, Chibune Hospital
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Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Arai I
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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MURATAKE Shigeki
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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FUJIMOTO Hiromasa
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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SAKAMORI Shigenori
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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Sakamori Shigenori
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Fujimoto Hiromasa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Muratake Shigeki
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Watanabe Masahiro
Department Of Anatomy Hokkaido University School Of Medicine
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Watanabe Masahiro
Department Of Agricultural Chemistry Faculty Of Agriculture The University Of Tokyo
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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