Single-Mode Operation of Optically Pumped Membrane Buried Heterostructure Distributed-Feedback Lasers : Optics and Quantum Electronics
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概要
- 論文の詳細を見る
1.5 μm-wavelength GaInAsP/InP membrane buried heterostructure distributed-feedback laser consisting of deeply etched single-quantum-well wire-like active regions was realized using low damage CH_4/H_2 reactive ion etching and embedding growth by the organo-metallic vapor phase epitaxy technique. A threshold pump power of 40 mW and a sub-mode suppression-ratio of 36 dB were obtained for a 142 nm-thick semiconductor membrane core layer with a cavity length of 120 μm and a stripe width of 2 μm under room-temperature continuous wave optical pumping by a 970 nm wavelength laser diode.
- 社団法人応用物理学会の論文
- 2002-03-01
著者
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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NUNOYA Nobuhiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Nunoya Nobuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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OKAMOTO Takeshi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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NUNOTYA Nobuhiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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ONODERA Yuichi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Nunotya Nobuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Okamoto Takeshi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Onodera Yuichi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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