ARAI Shigehisa | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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- 同名の論文著者
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関連著者
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
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Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Arai S
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai I
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura S
Sony Corp. Yokohama Jpn
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NUNOYA Nobuhiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Yagi H
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Nunoya Nobuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Yasumoto H
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Yagi H
Konoshima Chemical Co. Ltd.
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Tanaka S
International Superconductivity Technol. Center Tokyo Jpn
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Nunoya N
Tokyo Inst. Technol. Tokyo Jpn
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Yagi Hideki
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Raj Mothi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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YASUMOTO Hideo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Yasumoto Hideo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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YAGI Hideki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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WIEDMANN Jorg
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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OHIRA Kazuya
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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KOJIMA Takashi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Kojima Tetsuya
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
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Wiedmann Jorg
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Physical Electronics Tokyo Institute Of Technology
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SANO Takuya
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Ohira Kazuya
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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TAMURA Munehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Kojima T
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
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Tamura Munehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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MARUYAMA Takeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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HAQUE Anisul
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Ohira Kazuya
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura M
Univ. Tokyo Tokyo Jpn
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Suematsu Yasuharu
Department Of Electronic Engineering Kohgakuin University
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Yagi Hideki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Nakamura M
Institute Of Advanced Material Study And Department Of Molecular Science And Technology Graduate Sch
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EBIHARA Koji
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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SUEMATSU Yasuharu
Department of Physical Electronics, Tokyo Institute of Technology
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NAKAMURA Madoka
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TANAKA Suguru
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Sano Takuya
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura Shin-ichiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Murayama T
Integrated Research Institute Tokyo Institute Of Technology
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Nakamura M
Toshiba Corp. Yokohama Jpn
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Ravikumar K.g.
Department Of Physical Electronics Tokyo Institute Of Technology
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Ravikumar K.g.
The Advanced Tech. R&d Center Fujikura Ltd.
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TOYOSHIMA Shunsuke
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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SAKA Yoshikazu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Ebihara Koji
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura S
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tanaka S
Superconducting Sensor Laboratory Itami Laboratory
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MURANUSHI Kengo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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KIM Hyo-Chang
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Kim H‐c
Seoul National Univ. Seoul Kor
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Kim Hyo-chang
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tanaka S
Tokyo Inst. Technol. Tokyo Jpn
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NAKAYA Hiroyuki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Ebihara K
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Nakaya Hiroyuki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Maruyama Takeo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Haque A
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Maruyama Takeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ravikumar K.
Department Of Physical Electronics Tokyo Institute Of Technology
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SERIZAWA Naoki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Toyoshima Shunsuke
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Serizawa Naoki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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DHANORM Plumwongrot
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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WATANABE Masahiro
Department of Information Processing, Tokyo Institute of Technology
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Nishida T
Ntt Basic Res. Lab. Kanagawa Jpn
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Asada Masahiro
Department of Neurosurgery, Chibune Hospital
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MATSUI Kensuke
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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IZUMI Akira
Japan Advanced Institute of Science and Technology (JAIST)
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Gotoh A
Tohoku Univ. Sendai Jpn
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Gotoh Akira
The 2nd Department Of Internal Medicine Shinshu University School Of Medicine
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Gotoh Akira
Tsukuba Research Laboratory Hitachi Maxell Ltd.
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Takata M
Nagaoka Univ. Technology Niigata
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Uchino Akira
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Uchino Akira
Laboratory Of Nutrition Chemistry Department Of Bioscience And Biotechnology Faculty Of Agriculture
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Ando Toshihiro
Core Research For Evolutional Science And Technology (crest) Japan Science And Technology Corporatio
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Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Nishida T
Nara Inst. Sci. And Technol. Nara Jpn
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Maeda T
Electrotechnical Lab. Tskuba Jpn
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MAEDA Takeshi
Central Research Laboratory, Hitachi, Ltd.
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Ando T
Okayama Prefectural Univ. Okayama Jpn
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Komori K
Faculty Of Engineering Tokyo Institute Of Technology
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Maeda Toru
Department Of Material Science Graduate School Of Engineering Tohoku Uniiversity
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Takizawa T
Nihon Univ. Tokyo Jpn
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Takizawa T
Department Of Physics College Of Humanities And Sciences Nihon University
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Ando T
School Of Medicine. Yokohama City University
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Watanabe Hirohito
Institute Of Material Science University Of Tsukuba
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Matsui K
Sanyo Electric Co. Ltd. Osaka Jpn
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Nishida Tetsuya
Central Research Laboratory Hitachi Ltd.
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Nishida Tetsuya
Central Resarch Laboratory Hitachi Ltd.
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Maeda T
Storage Technology Research Center Research & Development Group Hitachi Ltd.
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Maeda T
Electrotechnical Lab. Ibaraki Jpn
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Maeda Tatsuro
Electrotechnical Laboratory
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Nishida T
Nara Inst. Sci. And Technol. (naist) Nara Jpn
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Watanabe H
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Nishida T
Ntt Basic Research Laboratories
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Nishida Toshio
Ntt Basic Research Laboratories Physical Science Laboratory
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KIKUGAWA Tomoyuki
Anritsu Co.
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SHIMOMURA Kazuhiko
Department of Physical Electronics, Tokyo Institute of Technology
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IZUMI Akira
Department of Physical Electronics, Tokyo Institute of Technology
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OHKI Yoshimasa
Department of Physical Electronics, Tokyo Institute of Technology
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Sugiyama Hisataka
Central Research Laboratory, Hitachi Ltd.
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Horigome Shinkichi
Central Research Laboratory, Hitachi Ltd.
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ARAI Shinichi
Odawara Works, Hitachi Ltd
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SHIGEMATSU Kazuo
Odawara Works, Hitachi Ltd
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WATANABE Hitoshi
Tsukuba research Laboratory, Hitachi Maxell Ltd.
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ANDO Toshikazu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Shigematsu Koji
Central Research Laboratory Mitsui Mining & Smelting Co. Ltd.
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Saitoo Atsushi
Central Research Laboratory Hitachi Ltd.
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Shigematsu K
Faculty Of Education Iwate University
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Sugiyama H
Data Storage Amp Retrieval Systems Division Hitachi Ltd.
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Horigome Shinkichi
Central Research Laboratory Hitachi Ltd.
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OHKI Yoshio
NTT Advanced Technology Corporation
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Ohki Y
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Izumi A
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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Izumi Akira
Department Of Anatomy Iwate Medical University School Of Medicine
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Matsui Kensuke
Research And Development Division Kurita Water Industries Ltd
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Saka Yoshikazu
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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TAKIZAWA Toshiyuki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Ando T
Chiba Inst. Sci. Chiba Jpn
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Shigematsu K
Nippondenso Co. Ltd. Aichi
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Shimomura K
Department Of Electrical And Electronic Engineering Sophia University
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Shimomura Kazuhiko
Department Of Electrical And Electronic Engineering Sophia Universiry
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Dhanorm Plumwongrot
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Watanabe Masahiro
Department Of Anatomy Hokkaido University School Of Medicine
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Maeda Takeshi
Central Research Laboratory Hitachi Ltd.
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HAYAFUNE Yoshinori
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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NUMATA Kazunori
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Numata Kazunori
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology:matsushita Electronic C
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Numata Kazunori
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Serizawa Naoki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology:(present Address)ntt Da
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PLUMWONGROT Dhanorm
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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ONOMURA Akihiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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KANJO Hiroshi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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CHEN Bo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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OHTA Masataka
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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SHIM Jong-In
Department of Electronics Engineering, Hanyang University
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Choi In-hoon
Department Of Materials Science Korea University
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Lee Keun-sam
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Shin K‐c
Department Of Organic And Polymeric Materials Tokyo Institute Of Technology
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Shin Ki-chul
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Shim Jong-in
Department Of Electronics Engineering Hanyang University
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Kanjo Hiroshi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ohta M
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Serizawa N
Tokyo Inst. Technol. Tokyo Jpn
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Maeda T
Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn
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MATSUI Ken-ichi
Department of Physics, Faculty of Science, Osaka University
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Komori Kazuhiro
Faculty Of Engineering Tokyo Institute Of Technology
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WATANABE Masahiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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BACHER Gerd
Technische Physik, Universitat Wurzburg
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KUDO Koji
Department of Physical Electronics, Tokyo Institute of Technology
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SATOO Atsushi
Central Research Laboratory, Hitachi Ltd.
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SAITOO Atsushi
Central Research Laboratory, Hitachi Ltd.
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MURAYAMA Tomonori
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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MIDORIKAWA Hideki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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HAMANO Akira
Faculty of Engineering, Tokyo Institute of Technology
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MIYAMOTO Yasuyuki
Faculty of Engineering, Tokyo Institute of Technology
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SUEMATSU Yasuharu
Tokyo Institute of Technology
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KOMORI Kazuhiro
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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PANG Mu-Ting
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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Muranushi Kengo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Hayafune Yoshinori
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
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Takeuchi Y
Institute For Materials Research Tohoku University
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Jia Xue-ying
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology :(present Address) Ire
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Bacher G
Wuerzburg Univ. Wuerzburg Deu
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Bacher Gerd
Technical Physics Wurzburg University
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Hamano Akira
Faculty Of Engineering Tokyo Institute Of Technology
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Pang Mu-ting
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology:harbin Shipb
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Choi In-hoon
Department Of Material Science Korea University
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Choi In-hoon
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology:korea Univer
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SHIMIZU Takehiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TAKEUCHI Yasushi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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MUGURUMA Hitoshi
Department of Electronic Engineering, Shibaura Institute of Technology
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MURATAKE Shigeki
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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FUJIMOTO Hiromasa
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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SAKAMORI Shigenori
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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Sakamori Shigenori
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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BACHER Gerd
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Kudo Koji
Department Of Physical Electronics Tokyo Institute Of Technology
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Fujimoto Hiromasa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Muranushi Kengo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Shimizu Takehiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Muratake Shigeki
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Muguruma Hitoshi
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Chen Bo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ohta Masataka
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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OKAMOTO Takeshi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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NUNOTYA Nobuhiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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ONODERA Yuichi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Miyamoto Yasuyuki
Faculty Of Engineering Tokyo Institute Of Technology
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Nunotya Nobuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Okamoto Takeshi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Takeuchi Yasushi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
著作論文
- High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers
- Highly Uniform 1.5 μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers
- Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser
- Continuous Wave Operation of 1.55 μm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
- Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH_4/H_2-Reactive Ion Etching
- GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/Semiconductor Bragg Reflectors
- GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes
- GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- [Invited]GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- Room Temperature-Copntinuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method
- Reliable Operation of GaInAsP/InP Distributed Feedback Laser with Wirelike Active Regions
- Distributed Reflector Lasers with First-Order Vertical Grating and Second-Order Bragg Reflectors
- GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings : Optics and Quantum Electronics
- 1.5-μm-Wavelength Distributed Feedback Lasers With Deeply Etched First-Order Vertical Grating : Optics and Quantum Electronics
- Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-μm-Wavelength Single-Mode Operation
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- Distributed Reflector Laser Integrated with Active and Passive Grating Sections Using Lateral Quantum Confinement Effect
- Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth
- GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial RegroWth : Optics and Quantum Electronics
- Distributed Reflector Laser with Wirelike Active Regions for Asymmetric Output Property (Short Note)
- Low Threshold Current Density Operation of GaInAsP/InP Lasers with Strain-Compensated Multiple-Layered Wirelike Active Regions
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2 Reactive-Ion Etching
- Characterization of Etching Damage in Cl_2/H_2-Reactive-Ion-Etching of GaInAs/InP Heterostructure
- Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH_4/H_2 Reactive Ion Etching
- Evaluation of Optical Gain Properties of GaInAsP/InP Compressively Strained Quantum-Wire Lasers
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2-Reactive-Ion-Etching
- Temperature Dependence of Internal Quantum Efficiency of 20-nm-Wide GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
- Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Fabrication of GaInAs/InP Quantum Wires by Organometallic-Vapor-Phase-Epitaxial (OMVPE) Selective Growth on Grooved Side Walls of Ultrafine Multilayers
- A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
- Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching
- Switching Operation of GaInAs/InP Multiple-Quantum-Well Directional-Coupler-Type All-Optical Switch
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- Proposal of Semiconductor Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structures
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- GaInAsP/InP Compressively Strained Quantum-Wire Lasers Fabricated by Electron Beam Lithography and 2-Step Organometallic Vapor Phase Epitaxy
- Photon Recycling Effect in Semiconductor Lasers using Low Dimensional Structures
- Stripe Direction Dependence of Mesa Angle Formed on (100) InP by Selective Etching using HCl Solution
- Anisotropic Polarization Properties of Photoluminescence from GaInAsP/InP Quantum-Wire Structures Fabricated by Two-Step Organometallic Vapor Phase Epitaxy Growth
- Single-Mode Operation of Optically Pumped Membrane Buried Heterostructure Distributed-Feedback Lasers : Optics and Quantum Electronics