Characterization of Etching Damage in Cl_2/H_2-Reactive-Ion-Etching of GaInAs/InP Heterostructure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-12-15
著者
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Nakamura M
Institute Of Advanced Material Study And Department Of Molecular Science And Technology Graduate Sch
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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NUNOYA Nobuhiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura M
Univ. Tokyo Tokyo Jpn
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NAKAMURA Madoka
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TAMURA Munehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Nunoya Nobuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Nunoya N
Tokyo Inst. Technol. Tokyo Jpn
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Nakamura M
Toshiba Corp. Yokohama Jpn
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Tamura Munehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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