Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon

スポンサーリンク

概要

• 論文の詳細を見る

• A new submicron channel length device, ion beam MOSFET (IB-MOS), is proposed as an effective application of focused-ion-beam implantation into silicon. The effective channel region of this device is formed by the one line scan of a 16 keV, focused B^+ ion beam (diameter: 0.2 μm, current density: 50 mA/cm^2) in an As^+ implanted n^- gate region between the source and drain. It is demonstrated by two dimensional device simulation that significant improvements in current gain, drain breakdown voltage and short-channel threshold effect are achieved for IB-MOS devices with 0.8 μm source-drain spacing. A fabricated IB-MOS device verifies the results of the simulation, except for the current gain, because of the high impurity effect in the channel region, which could be improved by choosing appropriate channel implantation conditions.

• 社団法人応用物理学会の論文
• 1984-08-20

著者

• Tamura M

  Univ. Tokyo Tokyo Jpn

• TAMURA Masao

  Central Research Laboratory, Hitachi, Ltd.

• Wada Y

  Institute Of Industrial Science University Of Tokyo:core Research For Evolutional Science And Techno

• Ishitani T

  Semiconductor Energy Lab. Co. Ltd. Kanagawa Jpn

• Masuda Hiroo

  Central Research Laboratory Hitachi Ltd.

• Tamura Masao

  Central Research Laboratory

• Ishitani T

  Central Research Laboratory Hitachi Ltd

• Ishitani Tohru

  Central Research Laboratory Hitachi Ltd.

• Ishitani Tohru

  Central Research Laboratory Hitachi Lid.

• WADA Yasuo

  Central Research Laboratory, Hitachi, Ltd.

• SHUKURI Shoji

  Central Research Laboratory, Hitachi Ltd.

• Shukuri S

  Semiconductor & Integrated Circuits Div.hitachi Ltd.

• Shukuri Shoji

  Central Research Laboratory Hitachi Ltd.

• Wada Yasuo

  Central Research Laboratory Hitach Ltd.

• WADA Yasuo

  Central Research Laboratory, Hitachi Ltd.

関連論文

• In Situ Characterization of the Initial Growth Stage of GaAs on Si by Coaxial Impact-Collision Ion Scattering Spectroscopy
• Real-Time Observation of AlAs/GaAs Superlattice Growth by Coaxial Impact Collision Ion Scattering Spectroscopy
• Reduction of Dislocation Density in GaAs on Si Substrate by Si Interlayer and Initial Si Buffer Layer
• In Situ Analysis of Gallium Arsenide Surfaces by Coaxial Impact Collision Ion-Scattering Spectroscopy with an Off-Axis Ion Source
• Fabrication of Micromechanical Tunneling Probes and Actuators on a Silicon Chip
• A Digital-to-Analog Converter of Displacement by an Integrated Micromechanism
• Fabrication of Less Than a 10 nm Wide Polycrystalline Silicon Nano Wire
• Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
• A method for multidirectional TEM observation of a specific site at atomic resolution
• Characterization of Etching Damage in Cl_2/H_2-Reactive-Ion-Etching of GaInAs/InP Heterostructure
• Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
• Characteristics of Nanoscale Lithography Using AFM with a Current-Controlled Exposure System
• Characteristics of Nanoscale Lithography Using Atomic Force Microscope with Current-Controlled Exposure System
• Strain Relaxation Processes in GaAs on Si by Two Groups of Misfit Dislocations
• Growth and Characterization of GaAs/GaSe/Si Heterostructures
• GaAs/AlAs and AlAs/GaAs Interface Formation Process Studied by Coaxial Impact-Collision Ion Scattering Spectroscopy: Comparison between Alternating and Simultaneous Source Supply
• Control of Surface Current on a Si(111) Surface by Using Nanofabrication
• Theoretical Study of Ga Adsorbates around Dangling-Bond Wires on am H-Terminated Si Surface: Possibility of Atomic-Scale Ferromagnets
• Initial Stage of Molecular Adsorption on Si(100) and H-terminated Si(100) Investigated by UHV-STM(STM-Si(001))
• Scanning Tunneling Spectroscopy of Dangling-Bond Wires Fabricated on the Si(100) -2 × 1 -H Surface
• Property Change of Si(111) Surface by Scanning Tunneling Microscope Manipulation
• Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching
• Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
• Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon : A-3: DEVICE TECHNOLOGY (III)
• Aluminum-Line Cutting End-Monitor Utilizing Scanning-Ion-Microscope Voltage-Contrast Images
• Evaluation of Thin Silicon Dioxide Layers by Beam Assisted Scanning Tunneling Microscope
• Observation of Threefold Symmetry Images due to a Point Defect on a Graphite Surface Using Scanning Tunneling Microscope (STM)
• Silicon Planar Devices Using Nitrogen Ion Implantation
• Oxidation Characteristics of Nitrogen Implanted Silicon
• Substrate Temperature Measurement during Ion Implantation
• Lifetime Evaluation of Ion Implanted Layers by Pulsed MOS Capacitance
• Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
• Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
• Generation of Dislocations Induced by Chemical Vapor Deposited Si_3N_4 Films on Silicon
• Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
• Evaluation of TEM samples of an Mg-Al alloy prepared using FIB milling at the operating voltages of 10kV and 40kV
• GaInAsP/InP Compressively Strained Quantum-Wire Lasers Fabricated by Electron Beam Lithography and 2-Step Organometallic Vapor Phase Epitaxy
• High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
• Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
• Material Representations and Algorithms for Nanometer Lithography Simulation (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))
• Molecular Scale E-Beam Resist Development Simulation for Pattern Fluctuation Analysis
• Stripe Direction Dependence of Mesa Angle Formed on (100) InP by Selective Etching using HCl Solution
• Application of a FIB-STEM system for 3D observation of a resin-embedded yeast cell
• Improvements in performance of focused ion beam cross-sectioning : aspects of ion-sample interaction
• Short Channel MOS-IC Based on Accurate Two Dimensional Device Design : A-6: MOS FIELD EFFECT TRANSISTORS
• Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon
• Monte Carlo Simulation of Energetic Ion Behavior in Amorphous Targets
• Study of Initial Stage of Molecular Adsorption on Si(100) by Scanning Tunneling Microscopy
• Growth Control of Nano-Needle on Silicon Surface Using Scanning Tunneling Microscope
• Development of an In-Situ Method of Fabricating Artificial Atom Structures on the Si(100) Surface
• Interaction of Ga Adsorbates with Dangling Bonds on the Hydrogen Terminated Si(100) Surface
• In Situ Direct Imaging of Scanning Tunneling Microscope Tip Apex
• In Situ Direct Imaging of Scanning Tunneling Microscope Tip Apex
• Single Pulse Laser Annealing of a Double-Implanted Layer
• Micromachining and Device Transplantation Using Focused Ion Beam : Etching and Deposition Technology
• Micromachining and Device Transplantation Using Focused Ion Beam
• Proposal for Device Transplantation using a Focused Ion Beam
• Experimental Determination of Current Paths of Ions Implanted into Insulators
• Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques
• Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon
• Extracted-Beam Divergence Calculations for a Liquid-Metal Ion Source
• New Apparatus for Measuring the Complex Dielectric Constant of a Highly Conductive Material
• very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH_4-PH_3-H_2 Reactants for Bipolar Devices : Condensed Matter
• Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing
• Secondary Defects in 2 MeV Phosphorus Implanted Silicon
• Droplet and Cluster Ion Emission from Ga and In Liquid Metal Ion Sources
• Focused Ion Beam Induced Deposition in the High Current Density Region : Focused Ion Beam Process
• Focused Ion Beam Induced Deposition in the High Current Density Region
• Growth of Tungsten Film by Focused Ion Beam Induced Deposition
• Lattice Defects in High-Dose As Implantation into Localized Si area : Condensed Matter
• Simple Calculation on Topography of Focused-Ion-Beam Sputtered Surface
• Application of High Current Arsenic Ion Implantation to Dynamic MOS Memory LSI's : A-4: DEVICE TECHNOLOGY (1)
• Distribution and Character of Misfit Dislocations in Homoepitaxial Silicon Crystals
• Optical Limitation in Fine Pattern Photolithography
• Low Energy and High Dose Phosphorus Ion Implantation into Silicon through SiO_2 Film
• Si Bridging Epitaxy from Si Windows onto SiO_2 by Q-Switched Ruby Laser Pulse Annealing
• CMOS Process Compatible ie-Flash(Inverse Gate Electrode Flash)Technology for System-on-a Chip(Special Issue on Nonvolatile Memories)
• Focused-Ion-Beam Broadening Due to Collisions with Residual Gas Atoms
• Boron and Phosphorus Jon Emissions from a Cu-P-Pt-B Liquid Metal Ion Source
• Mass and Energy Analyses of Gallium-Indium Liquid-Metal-Ion Sources
• Development of Phosphorus Liquid-Metal-Ion Source
• Epitaxial Transformation of Ion-Implanted Polycrystalline Si Films on (100) Si Substrates by Rapid Thermal Annealing
• Liquid Metal Ion Sources : Normalization of Virtual Source Size and Angular Ion Intensity
• Emission of Doubly Charged Dimer Ions from Liquid-Metal Ion Sources : Techniques, Instrumentations and Measurement
• A New Droplet Breakup Model for Dimer Ion Formation from a Gallium Liquid Metal Ion Source
• Carbon Needle Emitter for Boron and Aluminum Ion Liquid-Metal-Ion Sources
• Ion Range and Damage Calculations Using the Boltzmann Transport Equation
• Surface Analyzer Combining Secondary Ion Mass Spectrometry and Ion Scattering Spectrometry(速報)
• Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs

もっと見る 閉じる

スポンサーリンク