In Situ Direct Imaging of Scanning Tunneling Microscope Tip Apex

スポンサーリンク

概要

• 論文の詳細を見る

• In situ and direct imaging of the scanning tunneling microscope (STM) tip apex is made possible by nano needle structures grown on the sample surface (needle formation and tip imaging: NFTI). The nano needle structures, which extend several nms and are sharper than the tip, are formed on the silicon(111)7×7 surfaces by applying high negative voltages to the tip. The relationship between the tip apex feature and the STM image is investigated and it is experimentally confirmed that an atomically sharp tip apex results in STM images with atomic resolution.

• 社団法人応用物理学会の論文
• 1995-08-15

著者

• HEIKE Seiji

  Advanced Research Laboratory, Hitachi, Ltd.

• HASHIZUME Tomihiro

  Advanced Research Laboratory, Hitachi, Ltd.

• WADA Yasuo

  Advanced Research Laboratory, Hitachi Ltd.

• Hashizume Tomihiro

  Advanced Research Laboratory Hitachi Lid.

• Wada Y

  Institute Of Industrial Science University Of Tokyo:core Research For Evolutional Science And Techno

• Heike S

  Advanced Research Laboratory Hitachi Ltd.

• Heike Seiji

  Advanced Research Laboratory Hitachi Ltd.

• Heike S.

  Advanced Research Laboratory Hitachi Ltd.

• Wada Yasuo

  Central Research Laboratory Hitach Ltd.

• Wada Yasuo

  Advanced Research Laboratory Hitachi Ltd.

• Heike S

  Hitachi Ltd. Saitama Jpn

• Hashizume Tomihiro

  Advanced Research Lab., Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan

• Heike Seiji

  Advanced Research Lab., Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan

関連論文

• Fabrication of Four-Probe Fine Electrodes Using Scanning-Probe Nanofabrication
• Fabrication Process of Fine Electrodes Using Shadow Mask Evaporation and Tip-Induced Local Oxidation
• Fabrication of Micromechanical Tunneling Probes and Actuators on a Silicon Chip
• A Digital-to-Analog Converter of Displacement by an Integrated Micromechanism
• Fabrication of Less Than a 10 nm Wide Polycrystalline Silicon Nano Wire
• Nanofabrication Using Atomic Force Microscopy Lithography for Molecular Devices
• Dot-Array Resist Patterning Using Scanning Probe Microscopy with a Hybrid Current-Voltage Control Method
• Nanofabrication Using Atomic Force Microscopy Lithography Combined with Optical Lithography
• Combining Atomic Force Microscopic Lithography with Photolithography
• Fabrication of High-Resolution and High-Aspect-Ratio Patterns on a Stepped Substrate by Using Scanning Probe Lithography with a Multilayer-Resist System
• Fabrication of High-Resolution and High-Aspect-Ratio Patterning on a Stepped Substrate by Scanning Probe Lithography Using a Multilayer-Resist System
• Characteristics of Nanoscale Lithography Using AFM with a Current-Controlled Exposure System
• Characteristics of Nanoscale Lithography Using Atomic Force Microscope with Current-Controlled Exposure System
• Direct Imaging of Thermodynamic Process In Atom Migration by Using Scanning Tunneling Microscopy
• Reduced Density of Missing-Dimer Vacancies on Tungsten-Contaminated Si (100)-(2×n) Surface by Hydrogen Termination
• Control of Surface Current on a Si(111) Surface by Using Nanofabrication
• Theoretical Study of Ga Adsorbates around Dangling-Bond Wires on am H-Terminated Si Surface: Possibility of Atomic-Scale Ferromagnets
• Initial Stage of Molecular Adsorption on Si(100) and H-terminated Si(100) Investigated by UHV-STM(STM-Si(001))
• Scanning Tunneling Spectroscopy of Dangling-Bond Wires Fabricated on the Si(100) -2 × 1 -H Surface
• Property Change of Si(111) Surface by Scanning Tunneling Microscope Manipulation
• Evaluation of Thin Silicon Dioxide Layers by Beam Assisted Scanning Tunneling Microscope
• Observation of Threefold Symmetry Images due to a Point Defect on a Graphite Surface Using Scanning Tunneling Microscope (STM)
• Direct Observation of Working Vacuum Tunnel Junctions Using a Transmission Electron Microscope
• Silicon Planar Devices Using Nitrogen Ion Implantation
• Oxidation Characteristics of Nitrogen Implanted Silicon
• Substrate Temperature Measurement during Ion Implantation
• Lifetime Evaluation of Ion Implanted Layers by Pulsed MOS Capacitance
• Prospects and Problems of Single Molecule Information Devices
• Pulse Injection of Carbon Nanotubes onto a H-terminated Si(100) Surface
• First Principles Study of Dihydride Chains on H-Terminated Si(100)-2×1 Surface (Special Issue: Scanning Tunneling Microscopy/Spectroscopy and Related Techniques)
• Scanning Tunneling Microscopy/Spectroscopy of La_2@C_ Multilayer Islands on Si(100)-2×1-H Surfaces
• Initial-Stage Dihydride Formation on Si(100)-2x1-H Surface
• Scanning Tunneling Microscopy of the GaAs(001) Surface Reconstructions(STM-GaAs)
• FI-STM Investigation of Fullerenes Adsorbed on the Semiconductor and Metal Surfaces(STM-C_)
• Initial Backbond Oxidation at an Unpaired Dangling Bond Site on a Hydrogen-Terminated Si (100) 2×1 Surface
• Electrical Conductivity Measurement of DNA Double-Stranded Chains by "One-by-One" Cutting Method Using Atomic Force Microscopy(Cross-disciplinary physics and related areas of science and technology)
• Electrical Conduction of Ag Nanowire Fabricated on Hydrogen-Terminated Si(100) Surface (Special Issue: Scanning Tunneling Microscopy/Spectroscopy and Related Techniques)
• Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon
• Study of Initial Stage of Molecular Adsorption on Si(100) by Scanning Tunneling Microscopy
• Growth Control of Nano-Needle on Silicon Surface Using Scanning Tunneling Microscope
• Development of an In-Situ Method of Fabricating Artificial Atom Structures on the Si(100) Surface
• Interaction of Ga Adsorbates with Dangling Bonds on the Hydrogen Terminated Si(100) Surface
• In Situ Direct Imaging of Scanning Tunneling Microscope Tip Apex
• In Situ Direct Imaging of Scanning Tunneling Microscope Tip Apex
• Room-Temperature Adsorption of Si Atoms on H-terminated Si(001)-2×1 Surface(Condensed Matter: Structure, Mechanical and Thermal Properties)
• Experimental Determination of Current Paths of Ions Implanted into Insulators
• New Apparatus for Measuring the Complex Dielectric Constant of a Highly Conductive Material
• Application of High Current Arsenic Ion Implantation to Dynamic MOS Memory LSI's : A-4: DEVICE TECHNOLOGY (1)
• Optical Limitation in Fine Pattern Photolithography
• Nanofabrication Using Atomic Force Microscopy Lithography Combined with Optical Lithography
• Surface Potential Measurement by Atomic Force Microscopy Using Quartz Resonator
• First Principles Study of Dihydride Chains on H-Terminated Si(100)-$2{\times}1$ Surface
• Electrical Conduction of Ag Nanowire Fabricated on Hydrogen-Terminated Si(100) Surface
• Scanning Tunneling Microscopy/Spectroscopy of La2@C72 Multilayer Islands on Si(100)-2$\times$1-H Surfaces
• Fabrication of Four-Probe Fine Electrodes Using Scanning-Probe Nanofabrication
• Electronic Structures of Individual Poly(3-hexylthiophene) Nanowires on Hydrogen-Terminated Si(100) Surfaces
• Fabrication of Micromechanical Tunneling Probes and Actuators on a Silicon Chip
• Characteristics of Nanoscale Lithography Using AFM with a Current-Controlled Exposure System
• Initial-Stage Dihydride Formation on Si(100)-$2{\times}1$-H Surface

もっと見る 閉じる

スポンサーリンク