Proposal for Device Transplantation using a Focused Ion Beam
スポンサーリンク
概要
- 論文の詳細を見る
Device transplantation using a focused ion beam (FIB) has been proposed as a new high-resolution technique for microdevice assembly as well as device repair. FIB sputtering, redeposition, and FIB-induced deposition each work as a cutter or a fixer. Feasibility experiments have been carried out both for dummy-device transplantation on a silicon substrate and for microgear fabrication.
- 社団法人応用物理学会の論文
- 1990-01-20
著者
-
Ishitani T
Semiconductor Energy Lab. Co. Ltd. Kanagawa Jpn
-
Ishitani T
Central Research Laboratory Hitachi Ltd
-
Ishitani Tohru
Central Research Laboratory Hitachi Ltd.
-
Ishitani Tohru
Central Research Laboratory Hitachi Lid.
-
KAWANAMI Yoshimi
Central Research Laboratory, Hitachi Ltd.
-
Ohnishi T
International Center For Materials Nanoarchitectonics (mana) National Institute For Materials Scienc
-
OHNISHI Tsuyoshi
Central Research Laboratory, Hitachi, Ltd
-
Kawanami Y
Central Research Laboratory Hitachi Ltd.
-
Kawanami Yoshimi
Central Research Laboratory Hitachi Ltd.
関連論文
- Marked Enhancement of Photoconductivity and Quenching of Luminescence in Poly(2,5-dialkoxy-p-phenylene vinylene) upon C_ Doping
- A method for multidirectional TEM observation of a specific site at atomic resolution
- Hetero-Epitaxial Growth of ZnO Film by Temperature-Modulated Metalorganic Chemical Vapor Deposition
- Molecular layer-by-layer growth of C-60 thin films by continuous-wave infrared laser deposition
- Growth and Characterization of Ferroelectric Pb(Zr, Ti)O_3 Films on Interface-Controlled CeO_2(111)/Si(111) Structures
- Metallic LaTiO_3 / SrTiO_3 Superlattice Films on the SrTiO_3(100) Surface
- Magnetic Properties of Strain-Controlled SrRuO_3 Thin Films
- Combinatorial Synthesis of Transition Metal Oxide Superlattices (特集:表面科学研究のコンビナトリアルケミストリー)
- Direct Observation of Helical Polysilane Nanostructures by Atomic Force Microscopy
- Room-Temperature Epitaxial Growth of CeO_2 Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface
- Color-Variable Light-Emitting Diode Utilizing Conducting Polymer Containing Fluorescent Dye
- Aluminum-Line Cutting End-Monitor Utilizing Scanning-Ion-Microscope Voltage-Contrast Images
- Evaluation of TEM samples of an Mg-Al alloy prepared using FIB milling at the operating voltages of 10kV and 40kV
- High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
- Application of a FIB-STEM system for 3D observation of a resin-embedded yeast cell
- Improvements in performance of focused ion beam cross-sectioning : aspects of ion-sample interaction
- Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon
- Monte Carlo Simulation of Energetic Ion Behavior in Amorphous Targets
- Micromachining and Device Transplantation Using Focused Ion Beam : Etching and Deposition Technology
- Micromachining and Device Transplantation Using Focused Ion Beam
- Proposal for Device Transplantation using a Focused Ion Beam
- Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon
- Extracted-Beam Divergence Calculations for a Liquid-Metal Ion Source
- Droplet and Cluster Ion Emission from Ga and In Liquid Metal Ion Sources
- Focused Ion Beam Induced Deposition in the High Current Density Region : Focused Ion Beam Process
- Focused Ion Beam Induced Deposition in the High Current Density Region
- Growth of Tungsten Film by Focused Ion Beam Induced Deposition
- Simple Calculation on Topography of Focused-Ion-Beam Sputtered Surface
- Focused-Ion-Beam Broadening Due to Collisions with Residual Gas Atoms
- Boron and Phosphorus Jon Emissions from a Cu-P-Pt-B Liquid Metal Ion Source
- Mass and Energy Analyses of Gallium-Indium Liquid-Metal-Ion Sources
- Development of Phosphorus Liquid-Metal-Ion Source
- Liquid Metal Ion Sources : Normalization of Virtual Source Size and Angular Ion Intensity
- Emission of Doubly Charged Dimer Ions from Liquid-Metal Ion Sources : Techniques, Instrumentations and Measurement
- A New Droplet Breakup Model for Dimer Ion Formation from a Gallium Liquid Metal Ion Source
- Carbon Needle Emitter for Boron and Aluminum Ion Liquid-Metal-Ion Sources
- Ion Range and Damage Calculations Using the Boltzmann Transport Equation
- Surface Analyzer Combining Secondary Ion Mass Spectrometry and Ion Scattering Spectrometry(速報)