Growth of Tungsten Film by Focused Ion Beam Induced Deposition
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概要
- 論文の詳細を見る
Growth of tungsten film by focused-ion-beam (FIB) induced deposition is studied using scanning electron mucroscope. A 30 kV Ga^+ beam with a current density of 14 mA/cm^2 is used to deposit a tungsten film on a SiO_2 substrate in atungsten hexacarbonyl (W(CO)_6) gas environment. The resistivity of the film shows a sharp decrease around a dose of 0.6×10^<17>cm^<-2>, and the resistivity becomes almost constant (at about 120 μΩ・cm) at a larger dose. The film has island structures during the early stages of deposition. The sharp decrease in its resistivity corresponds to coalescence of the islands.
- 社団法人応用物理学会の論文
- 1991-03-15
著者
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Takahashi Yoshihiro
Department Of Applied Physics School Of Engineering Tohoku University
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Madokoro Yuuichi
Central Research Laboratory Hitachi Ltd.
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Takahashi Y
Tanaka Solid Junction Project Erato Japan Science And Research Corporation
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Ishitani T
Semiconductor Energy Lab. Co. Ltd. Kanagawa Jpn
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Ishitani T
Central Research Laboratory Hitachi Ltd
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Ishitani Tohru
Central Research Laboratory Hitachi Lid.
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TAKAHASHI Yoshio
Central Research Laboratory, Hitachi, Ltd.
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Takahashi Y
Department Of Molecular & Materials Sciences Kyushu University
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Takahashi Yoshio
Central Research Lab. Hitachi Ltd.
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