Convergent Beam Electron Diffraction Measurement for Local Strain Distribution in Si around a NiSi2 Island
スポンサーリンク
概要
- 論文の詳細を見る
Lattice strain distribution was measured in Si substrates near NiSi2 islands. Using the convergent beam electron diffraction (CBED) technique, quantitative and highly spatially resolved evaluations were carried out. Variations in the CBED patterns were found to be due to a combination of stress components with different orientations and magnitude. As a result, it was revealed that, in addition to normal stress components, singular stress with characteristic orientation or extremely high strain concentration was observed, especially near the NiSi2 island corner. This actual strain distribution was considered to be highly influenced by the shape, size and orientation of the NiSi2 island on Si substrates.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-08-15
著者
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Takahashi Yoshihiro
Department Of Applied Physics School Of Engineering Tohoku University
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Takahashi Y
Tanaka Solid Junction Project Erato Japan Science And Research Corporation
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Takahashi Yoichi
Department Of Nuclear Engineering Faculty Of Engineering University Of Tokyo
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Takahashi Yukihiro
Central Research Laboratory Matsushita Electric Industrial Co. Ltd.
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Takahashi Yoshinori
Division Of Electrical Electronic And Information Engineering Osaka University
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Takahashi Y
National Inst. Animal Health Ibaraki Jpn
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Tanaka Shun-ichiro
Tanaka Solid Junction Project Erato Japan Science And Technology Corporation
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Wakayama Yutaka
Tanaka Solid Junction Project, ERATO, Japan Science and Research Corporation,
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Takahashi Yumiko
Tanaka Solid Junction Project, ERATO, Japan Science and Research Corporation,
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Wakayama Yutaka
Tanaka Solid Junction Project Erato Japan Science And Technology Corporation
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