Strain Distribution near Si/NiSi_2 Interface Measured by Convergent Beam Electron Diffraction
スポンサーリンク
概要
- 論文の詳細を見る
Lattice strain distribution was measured in Si (111) substrates near NiSi_2 islands. Quantitative measurements with high spacial resolution were performed using convergent beam electron diffraction (CBED). Distorted and lower-symmetry CBED patterns were observed up to 2.0 μm from NiSi_2 islands. We show that these CBED patterns can be accounted for by a combination of stress components with different orientations. Stresses were found to be tensile perpendicular to NiSi_2 island edges and compressive parallel to them. In addition, another stress component which had a characteristic orientation was detectable within 0.5 μm of NiSi_2 island edges.
- 社団法人応用物理学会の論文
- 1996-12-15
著者
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Takahashi Yoshihiro
Department Of Applied Physics School Of Engineering Tohoku University
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Takahashi Y
Tanaka Solid Junction Project Erato Japan Science And Research Corporation
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Takahashi Yoichi
Department Of Nuclear Engineering Faculty Of Engineering University Of Tokyo
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Takahashi Yukihiro
Central Research Laboratory Matsushita Electric Industrial Co. Ltd.
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Takahashi Yoshinori
Division Of Electrical Electronic And Information Engineering Osaka University
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Takahashi Y
National Inst. Animal Health Ibaraki Jpn
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TANAKA Shun-ichiro
Tanaka Solid Junction Project, Japan Science and Technology Corporation
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Tanaka Shun-ichiro
Tanaka Solid Junction Project Erato Japan Science And Technology Corporation
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Takahashi Y
Department Of Molecular & Materials Sciences Kyushu University
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Wakayama Yutaka
Tanaka Solid Junction Project, ERATO, Japan Science and Research Corporation,
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Takahashi Yumiko
Tanaka Solid Junction Project, ERATO, Japan Science and Research Corporation,
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Wakayama Y
Tanaka Solid Junction Project Erato Japan Science And Technology Corporation
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Wakayama Yutaka
Tanaka Solid Junction Project Erato Japan Science And Technology Corporation
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Tanaka Shun-ichiro
Tanaka Solid Junction Project, ERATO, Japan Science and Research Corporation
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