Ion Range and Damage Calculations Using the Boltzmann Transport Equation
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概要
- 論文の詳細を見る
A modified computational method using the Boltzmann transport equation for calculating the depth distributions of implanted ions, nuclear deposited energy, vacancies, and interstitials is presented. The main modification is based on employment both of the depth interval, taken as half of the desired depth resolution, and of the ion step length, using the single scattering model. A higher efficiency in computing time is obtained for higher-energy ion implantation. The calculations are carried out for the implantation of boron and arsenic ions with 10 keV 〜2 MeV into silicon targets.
- 社団法人応用物理学会の論文
- 1990-01-20
著者
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Ishitani T
Semiconductor Energy Lab. Co. Ltd. Kanagawa Jpn
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Ishitani T
Central Research Laboratory Hitachi Ltd
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Ishitani Tohru
Central Research Laboratory Hitachi Lid.
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