Focused Ion Beam Induced Deposition in the High Current Density Region
スポンサーリンク
概要
- 論文の詳細を見る
Focused ion beam induced deposition (FIB・ID) in a high current density region is investigated. High current density experiments are done with current densities of 1.3 A/cm^2 and 8.6 A/cm^2. A 30 kV Ga^+ beam is line-scanned at various scanning speeds over a SiO_2 substrate in a w(CO)_6 gas environment. To analyze these results, a conventional model is improved by taking into consideration FIB scanning and impurity effects. The FIB・ID is simulated in a wide current density region using the improved model. It is found that shortening the dwell time is more effective than increasing the precursor gas flux for the high current density FIB・ID.
- 社団法人応用物理学会の論文
- 1991-11-30
著者
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Takahashi Yoshihiro
Department Of Applied Physics School Of Engineering Tohoku University
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Madokoro Yuuichi
Central Research Laboratory Hitachi Ltd.
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Takahashi Y
Tanaka Solid Junction Project Erato Japan Science And Research Corporation
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Ishitani T
Semiconductor Energy Lab. Co. Ltd. Kanagawa Jpn
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Ishitani T
Central Research Laboratory Hitachi Ltd
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Ishitani Tohru
Central Research Laboratory Hitachi Lid.
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TAKAHASHI Yoshio
Central Research Laboratory, Hitachi, Ltd.
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Takahashi Y
Department Of Molecular & Materials Sciences Kyushu University
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Takahashi Yoshio
Central Research Lab. Hitachi Ltd.
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