Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon
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概要
- 論文の詳細を見る
Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 μm, current density: 50 mA/cm^2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 μA/cm^2). High electrical activation of the FIB implanted layers is obtained by annealing below 800℃ as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3-4×10^<15> ions/cm^2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10^<-2> cm/s.
- 社団法人応用物理学会の論文
- 1983-11-20
著者
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Tamura M
Univ. Tokyo Tokyo Jpn
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Ishitani T
Semiconductor Energy Lab. Co. Ltd. Kanagawa Jpn
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Tamura Masao
Central Research Laboratory
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Tamura Hifumi
Central Research Laboratory Hitachi Ltd.
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Ishitani T
Central Research Laboratory Hitachi Ltd
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Ishitani Tohru
Central Research Laboratory Hitachi Lid.
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Tachi Shinichi
Central Research Laboratory Hitachi Lid.
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Shukuri S
Semiconductor & Integrated Circuits Div.hitachi Ltd.
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Shukuri Shoji
Central Research Laboratory Hitachi Ltd.
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TAMURA HIFUMI
Central Research Lab., Hitachi Ltd.
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