Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing
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概要
- 論文の詳細を見る
The heat treatment effect on supersaturated Si crystals with B, P, or As produced by high-dose ion implantation (8×10^<15>cm^<-2>) and Q-switched ruby laser annealing (2.0 J/cm^2) is investigated. The deactivation of excess B atoms becomes appreciable with a high-temperature heat treatment above 800℃, while deactivations of excess P and As atoms take place even at low temperatures of 300-400℃. The deactivation process of B atoms at such high temperatures was found to be a precipitation of B atoms with an activation energy of 3.2 eV using Hall effect measurements and transmission electron microscopy observation.
- 社団法人応用物理学会の論文
- 1982-05-20
著者
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Itoh Kazuo
Faculty of Pharmacy, Meijo University
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Tamura Masao
Central Research Laboratory
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Miyao Masanobu
Central Research Laboratory
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Sasaki Yoshisato
Faculty Of Engineering Gunma University
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MITSUISHI Tomokuni
Faculty of Technology, Gunma University
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Mitsuishi Tomokuni
Faculty Of Technology Gunma University
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Itoh Kazuo
Faculty Of Technology Gunma University
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TAMURA Masao
Central Research Laboratory, Hitachi Ltd.
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