Annealing Behavior of Phosphorus Implanted Silicon Crystals

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1977-02-05

著者

• Sasaki Yoshisato

  Faculty Of Technology Gunma University

• Sasaki Yoshisato

  Faculty Of Engineering Gunma University

• Mitsuishi Tomokuni

  Faculty Of Technology Gunma University

• ASAMI Hiroshi

  Faculty of Technology, Gunma University

• Asami Hiroshi

  Faculty Of Technology Gunma University

関連論文

• A Code-Division Multiplexing Technique for Efficient Data Transmission in VLSI Systems (Special Issue on Integrated Electronics and New System Paradigms)
• Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing
• Annealing Characteristics of Proton-Implanted p-Type Silicon
• Annealing Behavior of Phosphorus Implanted Silicon Crystals

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