Annealing Characteristics of Proton-Implanted p-Type Silicon

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1977-02-05

著者

• Sasaki Yoshisato

  Faculty Of Engineering Gunma University

• Mitsuishi Tomokuni

  Faculty Of Technology Gunma University

• Kogure Shigeru

  Industrial Electronics Div. Daini Seikosha Co. Lid.

• TANAKA Hirotoshi

  Central Research Laboratory, Hitachi, Ltd.,

• Tanaka Hirotoshi

  Central Research Laboratory Hitachi Ltd.

関連論文

• A Code-Division Multiplexing Technique for Efficient Data Transmission in VLSI Systems (Special Issue on Integrated Electronics and New System Paradigms)
• Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing
• Annealing Characteristics of Proton-Implanted p-Type Silicon
• Annealing Behavior of Phosphorus Implanted Silicon Crystals

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