Generation of Dislocations Induced by Chemical Vapor Deposited Si_3N_4 Films on Silicon

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1972-08-05

著者

• TAMURA Masao

  Central Research Laboratory, Hitachi, Ltd.

• Sunami Hideo

  Central Research Laboratory Hitachi Ltd.

• Tamura Masao

  Central Research Laboratory

関連論文

• Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
• Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
• Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon : A-3: DEVICE TECHNOLOGY (III)
• Novel High Density, Stacked Capacitor MOS RAM : A-1: MOS DEVICE AND LIST (1)
• Generation of Dislocations Induced by Chemical Vapor Deposited Si_3N_4 Films on Silicon
• Selective Oxide Coating of Silicon Gate (SELOCS) : A-4: DEVICE TECHNOLOGY (1)
• Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
• High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
• Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
• Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon
• Single Pulse Laser Annealing of a Double-Implanted Layer
• Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques
• Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon
• very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH_4-PH_3-H_2 Reactants for Bipolar Devices : Condensed Matter
• Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing
• Secondary Defects in 2 MeV Phosphorus Implanted Silicon
• Lattice Defects in High-Dose As Implantation into Localized Si area : Condensed Matter
• Distribution and Character of Misfit Dislocations in Homoepitaxial Silicon Crystals
• Low Energy and High Dose Phosphorus Ion Implantation into Silicon through SiO_2 Film
• Si Bridging Epitaxy from Si Windows onto SiO_2 by Q-Switched Ruby Laser Pulse Annealing
• Epitaxial Transformation of Ion-Implanted Polycrystalline Si Films on (100) Si Substrates by Rapid Thermal Annealing
• Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs

もっと見る 閉じる

スポンサーリンク