Single Pulse Laser Annealing of a Double-Implanted Layer
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概要
- 論文の詳細を見る
The effects of laser annealing using a Q-switched pulse ruby laser on a double-implanted layer (P^+ : 15 keV, 6×10^<15>cm^<-2> ; B^+ : 50 keV, 2×10^<14>cm^<-2>) were investigated. The total carrier profile of the thus-formed n-p-n structure after laser irradiation was found to be described by superimposing the profiles of the dopants. No suck-in or push-out effects, which occur in furnace annealing, were found in p-layers 1500 A and thicker. An estimate by numerical calculations of the carrier profile after laser irradiation is also presented.
- 社団法人応用物理学会の論文
- 1980-02-05
著者
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TAMURA Masao
Central Research Laboratory, Hitachi, Ltd.
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OHKURA Makoto
Central Research Lab., Hitachi, Lid.
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NATSUAKI Nobuyoshi
Central Research Laboratory, Hitachi Ltd.
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Tamura Masao
Central Research Laboratory
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Ohkura Makoto
Central Research Laboratory
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TOKUYAMA Takashi
Central Research Laboratory
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Natsuaki Nobuyoshi
Central Research Laboratory Hitachi Ltd.
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Natsuaki Nobuyoshi
Central Laboratory Hitachi Ltd.
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