Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1982-12-20

著者

• Itoh Hisayoshi

  Institute Of Materials Science University Of Tsukuba

• Itoh H

  Semiconductor Academic Research Center

• TAMURA Masao

  Central Research Laboratory, Hitachi, Ltd.

• Saitoh Tadashi

  Central Research Laboratory Hitachi Ltd.

• Itoh Hitoshi

  Semiconductor Academic Research Center

• Tamura Masao

  Central Research Laboratory

• ITOH Haruo

  Central Research Laboratory, Hitachi Lid.

• TOKUYAMA Takashi

  Central Research Laboratory

• Tokuyama Takashi

  Central Research Laboratory Hitachi Ltd.

• TOKIGUCHI Katsumi

  Central Research Laboratory, Hitachi Ltd.

• Saitoh Tadashi

  Central Research Laboratory

• Itoh Haruo

  Central Research Laboratory Hitachi Ltd.

• Tokiguchi Katsumi

  Central Research Laboratory Hitachi Ltd.

• Saitoh Tadashi

  Central Research Laboraotry

関連論文

• Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O^ Ion Backscattering
• Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
• Electro- and Thermomigration of Metallic Islands on Si(100) Surface
• Ion-Induced Anger Electrons Emitted from MgO and GaP under Shadowing Conditions
• Anger Electron Emission under Jon-Beam Shadowing Conditions
• Large-Area MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSIs
• MOVPE Growth of AlGaAs /GaAs Heterostructures for HEMT LSI
• Multi-Wafer Growth of HEMT LSI Quality AlGaAs/GaAs Heterostructures by MOCVD
• Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
• Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
• Nature and Annealing Behavior of Disorders in Ion Implanted Silicon
• Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon : A-3: DEVICE TECHNOLOGY (III)
• Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
• Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
• Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
• Short Channel MOS FET's Fabricated by Self-Aligned Ion Implantation and Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
• Electron Irradiation Effects on Electrical Properties of a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Electron Irradiation Effects on a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
• Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
• Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
• Generation of Dislocations Induced by Chemical Vapor Deposited Si_3N_4 Films on Silicon
• Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
• Novel Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition : LATE NEWS
• Deposition of Silicon Nitride Films by Microwave Glow Discharge
• High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
• Short Cavity All-Solid-State Femtosecond Cr:LiSAF Laser
• Femtosecond Pulse Delivery through Long Multimode Fiber Using Adaptive Pulse Synthesis
• Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
• Transform-Limited 30-fs Pulse Generation from a Diode-Pumped Kerr-Lens Mode-Locked Cr:LiSAF Laser
• Compact Diode-Pumped Cr^3+:LiSrAlF_6 Femtosecond Laser
• Ion Irradiation Effect on Ba_2YCu_3O_7 Superconductor
• Electron Irradiation Effects on a Ba_2YCu_3O_7 Superconductor : Electrical Properties of Condensed Matter
• Nondestructive Measurement of Minority Carrier Lifetimes in Si Wafers Using Frequency Dependence of ac Photovoltages
• Measurement of Minority Carrier Lifetimes using AC Photovoltages Excited by Two Photon Beams of Different Wavelengths
• A Non-Destructive Method for Measuring Lifetimes for Minority Carriers in Semiconductor Wafers Using Frequency-Dependent ac Photovoltages
• Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
• A Photovoltaic Method for Evaluating Junction Characteristics Using Cut-Off Frequency
• Silicon Solar Cells Fabricated by a New Ion Implantation Concept : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
• Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
• Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
• Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
• Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
• Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon
• Single Pulse Laser Annealing of a Double-Implanted Layer
• Germanium and Silicon Film Growth by Low-Energy Ion Beam Deposition
• Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques
• Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon
• very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH_4-PH_3-H_2 Reactants for Bipolar Devices : Condensed Matter
• Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing
• Secondary Defects in 2 MeV Phosphorus Implanted Silicon
• Silicon Solar Cells Fabricated by Ion Implantation and Laser Annealing : I-3: SILICON SOLAR CELLS (III)
• Optical Reflectivity Studies of Damage in Ion Implanted Silicon
• Optimization of High-Efficiency n^+-p-p^+ Back-Surface-Field Silicon Solar Cells
• Lattice Defects in High-Dose As Implantation into Localized Si area : Condensed Matter
• Distribution and Character of Misfit Dislocations in Homoepitaxial Silicon Crystals
• Low Energy and High Dose Phosphorus Ion Implantation into Silicon through SiO_2 Film
• Si Bridging Epitaxy from Si Windows onto SiO_2 by Q-Switched Ruby Laser Pulse Annealing
• Contactless Measurement of Wafer Lifetime by Free Carrier Infrared Absorption : C-6: CHARACTERIZATION
• Fabrication and Properties of Silicon Solar Cells Using Squarely Shaped Crystals : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
• Chemical and Physical Sputtering in F^+ Ion Beam Etching of Si
• Thermal Expansion Coefficient of a Pyrolitically Deposited Silicon Nitride Film
• Microplasmas in Alloyed Germanium P-N Junctions
• Polycrystalline Indium Phosphide Solar Cells Fabricated on Molybdenum Substrates
• Microstructure of Polycrystalline Indium Phosphide Prepared by Chemical Vapor Deposition
• Characterization of External Quantum Efficiencies of GaAs : Si Light-Emitting Diodes
• Epitaxial Transformation of Ion-Implanted Polycrystalline Si Films on (100) Si Substrates by Rapid Thermal Annealing
• Model for a Quartz-Crystal Tuning Fork Using Torsion Spring at the Joint of the Arm and the Base and Analysis of Its Frequency
• Czochralski Growth of Square Silicon Single Crystals
• Highly Efficient, Large-Area Polycrystalline Silicon Solar Cells Fabricated Using Hydrogen Passivation Technology
• Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs

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