Novel Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition : LATE NEWS
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
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Saitoh Tadashi
Central Research Laboratory Hitachi Ltd.
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MATSUBARA Sunao
Central Research Laboratory, Hitachi Ltd.
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Matsubara Sunao
Central Research Laboraotry
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Migitaka Masatoshi
Central Research Laboraotry
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MURAMATSU Shinichi
Central Research Laboraotry
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Saitoh Tadashi
Central Research Laboratory
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Migitaka Masatoshi
Central Research Lab. Hitachi Ltd.
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Saitoh Tadashi
Central Research Laboraotry
関連論文
- Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
- Reduction of Gap State Density in a-SiGe:H Alloys
- Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
- Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
- Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
- Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
- Novel Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition : LATE NEWS
- Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
- Silicon Solar Cells Fabricated by a New Ion Implantation Concept : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
- Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
- very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH_4-PH_3-H_2 Reactants for Bipolar Devices : Condensed Matter
- Optimization of High-Efficiency n^+-p-p^+ Back-Surface-Field Silicon Solar Cells
- Delineation of GaAs Junctions Made by Liquid Phase Epitaxy
- Contactless Measurement of Wafer Lifetime by Free Carrier Infrared Absorption : C-6: CHARACTERIZATION
- Fabrication and Properties of Silicon Solar Cells Using Squarely Shaped Crystals : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- Observation of p-n Junctions with a Flying-Spot Scanner Using a Chopped Photon Beam
- Polycrystalline Indium Phosphide Solar Cells Fabricated on Molybdenum Substrates
- Microstructure of Polycrystalline Indium Phosphide Prepared by Chemical Vapor Deposition
- Characterization of External Quantum Efficiencies of GaAs : Si Light-Emitting Diodes
- Spectrum of the Light Emitted from Silicon Junctions
- Silicon Negative Resistance Diodes
- A Failure Analysis of a Gunn Diode with a Scanning Electron Microscope
- Microplasma Observation on GaP pn Junctions
- Non-Destructive Method of Observing Inhomogeneities in p-n Junctions with a Chopped Photon Beam
- Czochralski Growth of Square Silicon Single Crystals
- p-n Junctions Made by Alloying Indium onto p-Type Silicon Pellets
- Highly Efficient, Large-Area Polycrystalline Silicon Solar Cells Fabricated Using Hydrogen Passivation Technology
- Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs