Non-Destructive Method of Observing Inhomogeneities in p-n Junctions with a Chopped Photon Beam
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概要
- 論文の詳細を見る
A flying-spot scanner is constructed to obtain scanning images of p-n junctions made upon Si wafers, having diameters of 50 to 60 mm. The specimen is set upon a metal stage, and the junction surface is entirely covered with a 15-μm thick mylar sheet. A wide transparent electrode is put upon the sheet. A photon beam whose chopping frequency and diameter are 2 kHz and nearly 100 μm, respectively, irradiates the specimen through the transparent electrode and the mylar sheet. Ac photovoltages are measured. Variations of junction depths of 1.1 to 1.4 μm, and those of diffusion lengths in the substrate wafer are easily revealed with the present method.
- 社団法人応用物理学会の論文
- 1981-02-05
著者
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Matsubara Sunao
Central Research Laboratory Hitachi Ltd.
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Matsubara Sunao
Central Research Laboraotry
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Nanba Mitsuo
Central Research Laboratory Hitachi Ltd.
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Munakata Chusuke
Central Res. Lab. Hitachi Ltd.
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MUNAKATA Chusuke
Central Research Laboratory, Hitachi Ltd.
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