Contribution of Thermal SiO2 Layers on Si Wafer Back Surfaces to Photoconductive Decay Time Measured with Microwave Reflection from Front Surfaces
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概要
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Two p-type silicon wafers, 420 $\mu$m in thickness, have been provided with different surface recombination characteristics. It is found that the back surface oxide layer greatly contributes to the photoconductive decay time in the wafer whose surface recombination rate is not large. However, the decay time is independent of the back surface oxide layer when the time is short because of the surface recombination.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-06-20
著者
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Honma Noriaki
Central Research Laboratory Hitachi Lid.
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Yagi Kunihiro
Central Research Laboratory Hitachi Ltd.
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Munakata Chusuke
Central Res. Lab. Hitachi Ltd.
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Tamura Hiroshi
Central Research Laboratory Hitachi Ltd.
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Munakata Chusuke
Central Research Laboratory Hitachi, Ltd., Kokubunji, Tokyo 185
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