Confirmation of Aluminum-Induced Negative Charge in Thermally Oxidized Silicon Wafers Using AC Surface Photovoltage Method
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概要
- 論文の詳細を見る
The ac surface photovoltage (SPV) technique is applied for detecting the polarity of charge in thermally-oxidized silicon (Si) wafers, in which aluminum (Al) is deliberately incorporated in the native oxide. Upon thermal oxidation, most of the Al is contained in the oxide and it segregates at the very top of the oxide layer. With the increase of Al concentration in the oxide, ac SPV appears and increases for oxidized n-type Si wafers, whereas in p-type Si it decreases, indicating that Al acts as a negative charge by forming the (AlOSi) network and compensates the positive fixed oxide charge. With the removal of the surface layer, for n-type Si, ac SPV disappears, whereas for p-type Si, it appears because the net positive fixed oxide charge becomes dominant.
- 社団法人応用物理学会の論文
- 1994-06-15
著者
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SHIMIZU Hirofumi
Semiconductor Design & Development Center, Hitachi, Ltd.
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MUNAKATA Chusuke
Central Research Laboratory, Hitachi, Ltd.
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Munakata Chusuke
Central Research Laboratory Hitachi Lid.
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Munakata Chusuke
Central Research Laboratory Hitachi Ltd.:(present Address)department Of Electronics Tohoku Institute
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Shimizu Hirofumi
Semiconductor & Integrated Circuits Division Hitachi Lid.
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Munakata Chusuke
Central Research Laboratory Hitachi Ltd.:(present Address)department Of Electronics Tohoku Institute
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Munakata Chusuke
Central Res. Lab. Hitachi Ltd.
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