Confirmation of Aluminum Distribution in Thermally Grown Oxide of Silicon Wafers
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概要
- 論文の詳細を見る
The concentration depth profile of aluminum (Al) in the thermally-grown silicon (Si) dioxide (SiO_2) is investigated in detail using high resolution inductively coupled plasma mass spectroscopy. A conceptual model is proposed where the Al segregated at the very top of the SiO_2 creates a negative charge layer by forming an (AlOSi)^- network, and a small amount of Al residing in the SiO_2-Si interface gives some possibilities of forming interface traps. This interpretation is based on the results reported here and on previous results obtained from ac surface photovoltage measurements.
- 社団法人応用物理学会の論文
- 1994-10-15
著者
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Shimizu Hirofumi
Semiconductor & Integrated Circuits Division Hitachi Lid.
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ISHIWARI Shuichi
Semiconductor & Integrated Circuits Division, Hitachi Ltd.
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UCHIDA Hiroshi
Nagaoka University of Technology
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Ishiwari S
Hitachi Ltd. Tokyo Jpn
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SHIMIZU Hirofumi
Semiconductor & Integrated Circuits Division, Hitachi Ltd.
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