Computer Simulation of Stress Induced Dislocation Multiplication in Large-Diameter Silicon Wafer in High-Temperature Device Processing
スポンサーリンク
概要
著者
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Shimizu H
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Shimizu Hirofumi
Semiconductor & Integrated Circuits Division Hitachi Lid.
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SUDOU Daisaku
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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SATOH Tomomi
Hitachi ULSI Engineering Corp.
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SAITOU Shigeaki
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Sudou Daisaku
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Saitou Shigeaki
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
関連論文
- Simplified AC Photovoltaic Measurermemt of Minority Carrier Lifetime in Czochralski-Grown Silicon Wafers Having Ring-Distributed Stacking Faults
- Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device Processing
- Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits Based on P^-/P^- Thin-Film Epitaxial Silicon Wafers
- Oxidation-Induced Stacking Faults Dependent on Oxygen Concentration in Czochralski-Growrn Silicon Wafers
- Confirmation of Aluminum-Induced Negative Charge in Thermally Oxidized Silicon Wafers Using AC Surface Photovoltage Method
- Effect of Aluminum on Ac Surface Photovoltages in Thermally Oxidized n-Type Silicon Wafers
- Characterization of Damaged Layer Using AC Surface Photovoltage in Silicon Wafers
- Nondestructive Diagnostic Method Using AC Surface Photovoltage in Silicon Wafers Rinsed with Metal-Contaminated Water Solutions
- Confirmation of Aluminum-Induced Negative Charge in Native Silicon Dioxide
- Monitoring of Ultra-Trace Contaminants on Silicon Wafers for ULSI by a Novel Impurity Extraction and AC Surface Photovoltage Methods
- Iron-Induced Negative Charge in Thermally Grown Oxide of Silicom Wafers
- Confirmation of Aluminum Distribution in Thermally Grown Oxide of Silicon Wafers
- Enhanced Growth of Thermal Oxide Due to Impurity Absorption from Adjoining Contaminated Silicon Wafers
- Computer Simulation of Stress Induced Dislocation Multiplication in Large-Diameter Silicon Wafer in High-Temperature Device Processing
- AC Photovoltaic Images of Thermally Oxidized P-Type Silicon Wafers Contaminated with Metals