Oxidation-Induced Stacking Faults Dependent on Oxygen Concentration in Czochralski-Growrn Silicon Wafers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-02-15
著者
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Shimizu H
Nihon Kesso Koogaku Co. Ltd. Gunma Jpn
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Kanai A
Semiconductor Design & Development Center Hitachi Ltd.
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SHIMIZU Hirofumi
Semiconductor Design & Development Center, Hitachi, Ltd.
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Shimizu H
National Inst. Materials And Chemical Res. Ibaraki Jpn
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Shimizu Hirofumi
High-technology Research Center And Faculty Of Engineering Kansai University
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Shimizu Hirofumi
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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Shimizu H
High-technology Research Center And Faculty Of Engineering Kansai University
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NAGANUMA Takashi
Kofu Works, Hitachi, Ltd.
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KANAI Akira
Semiconductor Design & Development Center, Hitachi, Ltd.
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UMEMURA Nobuaki
Semiconductor Design & Development Center, Hitachi, Ltd.
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Naganuma Takashi
Kofu Works Hitachi Ltd.
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Shimizu Hideaki
Department Of Reaction Chemistry Faculty Of Engineering The University Of Tokyo
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Shimizu Hirofumi
Semiconductor & Integrated Circuits Division Hitachi Lid.
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Umemura N
Faculty Of Photonics Science Chitose Institute Of Science And Technology
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- Simplified AC Photovoltaic Measurermemt of Minority Carrier Lifetime in Czochralski-Grown Silicon Wafers Having Ring-Distributed Stacking Faults
- Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device Processing
- Comparison of Minority Carrier Lifetimes Measured by Photoconductive Decay and ac Photovoltaic Method : Techniques, Instrumentations and Measurement
- Nondestructive Observations of Surface Flaws and Contaminations in Silicon Wafers by Means of a Scanning Photon Microscope : Semiconductors and Semiconductor Devices
- Calibration of Minority Carrier Lifetimes Measured with an ac Photovoltaic Method : Techniques, Instrumentations and Measurement
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