Nondestructive Diagnostic Method Using AC Surface Photovoltage in Silicon Wafers Rinsed with Metal-Contaminated Water Solutions

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概要

• 論文の詳細を見る

• The ac surface photovoltage (SPV) technique is intended for nondestructive detection of impurities in silicon (Si) wafer surfaces rinsed with various metal-contaminated water solutions. Iron (Fe)- and copper (Cu) considerably increase the ac SPVs of rinsed n-type Si wafers. This indicates that Fe and Cu induce a negative charge in the native oxide, which is similar to results previously reported for aluminum (AT) and/or Fe-contaminated Radio Corporation of America (RCA) alkaline rinses. Nickel and zinc induce a small ac SPV change, whereas Al and chromium effect no change even after exposure in air for 7 days. These results suggest that the ac SPV technique is applicable for nondestructively detecting contaminants in water-rinsed wafers.

• 社団法人応用物理学会の論文
• 1993-09-15

著者

• Munakata Chusuke

  Central Research Laboratory Hitachi Lid.

• Shimizu Hirofumi

  Semiconductor & Integrated Circuits Division Hitachi Lid.

• Munakata Chusuke

  Central Research Laboratory Hitachi Ltd.:(present Address)department Of Electronics Tohoku Institute

• Munakata Chusuke

  Central Research Lab. Hitachi Ltd.

• Munakata Chusuke

  Central Res. Lab. Hitachi Ltd.

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