AC Photovoltaic Images of Thermally Oxidized P-Type Silicon Wafers Contaminated with Metals
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概要
- 論文の詳細を見る
Upon oxidation, traces of some metal impurities intentionally introduced are identified qualitatively in p-type silicon (Si) wafers as dark photovoltaic images, using a scanning photon microscope (SPM) based on ac surface photovoltages (SPVs). Metal impurities in the Si bulk act as recombination centers for excess carriers, eventually reducing SPVs at the contaminated region. The SPM was successfully applied to eliminate such deteriorated wafers nondestructively in semiconductor device processing.
- 社団法人応用物理学会の論文
- 1992-08-15
著者
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Shimizu Hirofumi
Semiconductor & Integrated Circuits Division Hitachi Lid.
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Munakata Chusuke
Central Res. Lab. Hitachi Ltd.
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MUNAKATA Chusuke
Central Research Laboratory, Hitachi Ltd.
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SHIMIZU Hirofumi
Semiconductor Design & Development Center, Hitachi Ltd.
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