Voltage Signal due to Electron-Beam-Induced Conductivity in Semiconductors
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A formula for a change in the terminal voltage due to the electron-beam irradiation is proposed for a d.c. biased semiconductor bar. The change is composed of three terms; an ohmic drop due to the irradiating beam current, an induced voltage due to the bulk electron voltaic effect and a signal due to the electron-beam-induced conductivity (β-conductivity). The last term, which is called β-conductive signal, is proportional to the square of electric field strength, or to the square of resistivity if the biasing current density is constant, and this was experimentally confirmed using a p-Ge bar whose volume and mean resistivity were 0.5×1×9.5 mm^3 and 3.8 Ωcm, respectively. The current, energy and diameter of the irradiating electron beam were o.1 nA, 20 KeV and about 10 μm, respectively.
- 社団法人応用物理学会の論文
- 1968-09-05
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