Measurement of Resistance by Means of Electron Beam -II-
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概要
- 論文の詳細を見る
Resistance of semiconductor materials was measured by using a focused electron beam. The experimental error was mainly due to the bulk electron voltaic effect in the material. To reduce the error, the surface of the specimen was sand-lapped. After the treatment the electron beam technique was successfully applied to semiconductor materials, within the error of a few per cent. Energy and current of the electron beam were in the range of 5 to 30 KeV and approximately 1 μA, respectively.
- 社団法人応用物理学会の論文
- 1966-12-15
著者
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Munakata Chusuke
Central Research Laboratory Hitachi Ltd.
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WATANABE Hiroshi
Central Research Lab. Hitachi Ltd.
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Munakata Chusuke
Central Res. Lab. Hitachi Ltd.
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