Measurement of Resistance by Means of Electron Beam -III-
スポンサーリンク
概要
- 論文の詳細を見る
An electron beam technique of measuring resistivity is reported. An electron beam was continuously scanned upon the specimen bar, and the ohmic drop (resistance × electron beam current) was electronically differentiated to get the resistivity. Resultant signal was displayed on a synchroscope screen. The technique was testified by using a GaAs bar whose dimensions were 0.5×0.9×7.0 mm^3. The resistivity distribution was measured along the long axis. Energy, current and diameter of the beam were 15 keV,5.5 nA and about 20 μm, respectively. Maximum resistivity of 4 MΩcm was measured in a measuring time of 10 seconds.
- 社団法人応用物理学会の論文
- 1969-11-05
著者
関連論文
- Simplified AC Photovoltaic Measurermemt of Minority Carrier Lifetime in Czochralski-Grown Silicon Wafers Having Ring-Distributed Stacking Faults
- Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device Processing
- Comparison of Minority Carrier Lifetimes Measured by Photoconductive Decay and ac Photovoltaic Method : Techniques, Instrumentations and Measurement
- Nondestructive Observations of Surface Flaws and Contaminations in Silicon Wafers by Means of a Scanning Photon Microscope : Semiconductors and Semiconductor Devices
- Calibration of Minority Carrier Lifetimes Measured with an ac Photovoltaic Method : Techniques, Instrumentations and Measurement
- Distortion of Electron-Beam-Recorded Patterns on a Photographic Plate due to Charge-Up
- A Method of Measuring Lifetime for Minority Carriers Induced by an Electron Beam in Germanium
- Nondestructive Measurement of Minority Carrier Lifetimes in Si Wafers Using Frequency Dependence of ac Photovoltages
- Measurement of Minority Carrier Lifetimes using AC Photovoltages Excited by Two Photon Beams of Different Wavelengths
- A Non-Destructive Method for Measuring Lifetimes for Minority Carriers in Semiconductor Wafers Using Frequency-Dependent ac Photovoltages
- A Photovoltaic Method for Evaluating Junction Characteristics Using Cut-Off Frequency
- Ac Surface Photovoltages in p-Type Silicon Wafers Oxidized in Water-Free and Wet Ambients
- Ac Surface Photovoltages in Strongly-Inverted Oxidized p-Type Silicon Wafers^*
- Fine Chromium Grating Directly Made by Irradiating Electron Beam
- Determination of Surface Charge and Interface Trap Densities in Naturally Oxidized n-Type Si wafers Using ae Surface Photovoltages
- Sample Thickness Dependence of Minority Carrier Lifetimes Measured Using an ac Photovoltaic Method
- Frequency-Dependent Photovoltage-Generating Areas in a Strongly-Inverted Oxidized p-Type Silicon Wafer
- Electron Beam Enhanced Surface Photovoltage
- Excitation-Power-Density Dependent ac Surface Photovoltages in Radiation-Damaged Si Wafer
- Non-Destructive Method for Measuring Cut-Off Frequency of a p-n Junction with a Chopped Photon Beam
- Confirmation of Aluminum-Induced Negative Charge in Thermally Oxidized Silicon Wafers Using AC Surface Photovoltage Method
- Effect of Aluminum on Ac Surface Photovoltages in Thermally Oxidized n-Type Silicon Wafers
- Change of Apparent Sensitivity of an Electron Resist Due to Backing Materials
- Characterization of Damaged Layer Using AC Surface Photovoltage in Silicon Wafers
- Mean Free Path of Fast Electrons for Plasmon Excitation in a Single Crystal
- Optical Reconstruction of Image from Fraunhofer Electron-Hologram
- A Novel Method of Electron Beam Recording on a Si Wafer
- Nondestructive Diagnostic Method Using AC Surface Photovoltage in Silicon Wafers Rinsed with Metal-Contaminated Water Solutions
- Confirmation of Aluminum-Induced Negative Charge in Native Silicon Dioxide
- Monitoring of Ultra-Trace Contaminants on Silicon Wafers for ULSI by a Novel Impurity Extraction and AC Surface Photovoltage Methods
- A Liquid Helium Cooled Stage for an Electron Microscope
- Observation of p-n Junctions with a Flying-Spot Scanner Using a Chopped Photon Beam
- Analysis of ac Surface Photovoltages in a Depleted Oxidized p-Type Silicon Wafer
- Saturation of ac Surface Photovoltages due to Photocapacitances in a Strongly-Inverted Oxidized p-Type Silicon Wafer
- Analysis of Trapezoid Distortion due to Charge-Up in Electron Beam Recording
- Voltage Signal due to Electron-Beam-Induced Conductivity in Semiconductors
- Die Verteilung des durch einen Elektronenstrahl ionisierten Ionenstromes im Elektronenstrahl-Apparate
- Measurement of Potential Distribution in a Semiconductor Crystal with an Electron Beam
- Detection of Resistivity Striations in a Ge Crystal with an Electron Beam
- On the Voltage Induced by an Electron Beam in a Bulk Semiconductor Crystal
- A Scanning Electron Microscopic Method of Obtaining Electric Field Distributions Using Solid-State Models
- A Failure Analysis of a Gunn Diode with a Scanning Electron Microscope
- Frequency Response of the Strong Inversion Layer in a Silicon Wafer
- The Photovoltaic Observation of a Non-Conductive Layer due to BN Formed in a Boron Implanted Si Junction
- Analysis of ac Surface Photovoltages in Accumulation Region : Optical Properties of Condensed Matter
- Non-Destructive Method of Observing Inhomogeneities in p-n Junctions with a Chopped Photon Beam
- An Electron Beam Method of Measuring Resistivity Distribution in Semiconductors
- Measurement of Resistance by Means of Electron Beam -III-
- Measurement of Resistance by Means of Electron Beam -II-
- Bulk Electron Voltaic Effect
- A Very Low Electron Temperature Mercury Plasma
- Density Distribution of a Mercury Plasma near an Anchored Cathode Spot
- Measurement of the Homogenity of a Semiconductor with an Electron Beam
- AC Photovoltaic Images of Thermally Oxidized P-Type Silicon Wafers Contaminated with Metals
- Observations of Sand-Blasted Surface of Germanium with a Scanning Electron Microscope
- Effects of Dipping in an Aqueous Hydrofluoric Acid Solution before Oxidation on Minority Carrier Lifetimes in p-Type Silicon Wafers
- Contribution of Thermal SiO2 Layers on Si Wafer Back Surfaces to Photoconductive Decay Time Measured with Microwave Reflection from Front Surfaces