A Novel Method of Electron Beam Recording on a Si Wafer
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概要
- 論文の詳細を見る
A p-type Si wafer covered with a Sin. film is proposed as a recording medium. When an electron beam of 20 keV irradiates the wafer at a dosage of 2 × 10^<-7>C/cm^2 or more, surface photovoltage decreases at the points irradiated by the electron beam. Thus, Roman characters recorded with the electron beam have been successfully interpreted with an improved flying-spot scanner.
- 社団法人応用物理学会の論文
- 1981-04-05
著者
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Munakata Chusuke
Central Research Laboratory Hitachi Lid.
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Miyazaki Masaru
Central Research Laboratory Hitachi Ltd.
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Munakata Chusuke
Central Res. Lab. Hitachi Ltd.
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