The Photovoltaic Observation of a Non-Conductive Layer due to BN Formed in a Boron Implanted Si Junction
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概要
- 論文の詳細を見る
An improved flying-spot scanning method using a chopped photon beam was applied to a boron implanted Si p-n junction 76 mm in diameter. In a small area of the junction, the ac photovoltage was 30% lower than that of the remaining area thus showing a clear contrast in the flying-spot scanning image. From studies of the frequency dependence of the photovoltage and measurements using a four-point probe, it was concluded that the peculiar layer was covered with a non-conductive layer. The electron beam diffration method showed this layer to be boron nitride (BN).
- 社団法人応用物理学会の論文
- 1982-03-05
著者
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Yagi Kunihiro
Central Research Laboratory Hitachi Ltd.
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Munakata Chusuke
Central Res. Lab. Hitachi Ltd.
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