Observation of p-n Junctions with a Flying-Spot Scanner Using a Chopped Photon Beam
スポンサーリンク
概要
- 論文の詳細を見る
A flying-spot scanner that employs a chopped photon beam emitted from a cathode ray tube is reported. The photon beam scanns a planar p-n junction put on a metal electrode through a In_2O_3-coated transparent electrode and a 15 μm-thick mylar spacer. The ac photovoltage is picked up with electrodes through a condensor formed by the spacer. The photovoltage signal modulates brightness of another cathode ray tube to form a scanning image. Mean wavelength and chopping frequency of the photon beam are 507 nm and 2 kHz. Scanning image analysis is done using photocurrent density equations based on a step-like junction model. Three kinds of junctions, a solar cell, a partly-deep junction and a non-uniformly ion implanted one, have been evaluated to show the validity of the present method.
- 社団法人応用物理学会の論文
- 1982-04-20
著者
-
WARABISAKO Terunori
Central Research Laboratory
-
Matsubara Sunao
Central Research Laboratory Hitachi Ltd.
-
Matsubara Sunao
Central Research Laboraotry
-
Munakata Chusuke
Central Research Laboratory Hitachi Lid.
-
Yagi Kunihiro
Central Research Laboratory Hitachi Ltd.
-
Warabisako Terunori
Central Research Laboratory Hitachi Ltd.
-
NANBA Mitsuo
Central Research Laboratory, Hitachi Ltd.
-
Nanba Mitsuo
Central Research Laboratory Hitachi Ltd.
-
Munakata Chusuke
Central Res. Lab. Hitachi Ltd.
-
MUNAKATA Chusuke
Central Research Laboratory, Hitachi Ltd.
-
YAGI Kunihiro
Central Research Laboratory, Hitachi Ltd.
関連論文
- Simplified AC Photovoltaic Measurermemt of Minority Carrier Lifetime in Czochralski-Grown Silicon Wafers Having Ring-Distributed Stacking Faults
- Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device Processing
- Comparison of Minority Carrier Lifetimes Measured by Photoconductive Decay and ac Photovoltaic Method : Techniques, Instrumentations and Measurement
- Nondestructive Observations of Surface Flaws and Contaminations in Silicon Wafers by Means of a Scanning Photon Microscope : Semiconductors and Semiconductor Devices
- Calibration of Minority Carrier Lifetimes Measured with an ac Photovoltaic Method : Techniques, Instrumentations and Measurement
- Formulation of Power Loss Equation for an Emitter with Dot Contacts and Proposal of an Improved Emitter Structure in silicon Solar Cells
- Distortion of Electron-Beam-Recorded Patterns on a Photographic Plate due to Charge-Up
- Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
- Reduction of Gap State Density in a-SiGe:H Alloys
- Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
- A Method of Measuring Lifetime for Minority Carriers Induced by an Electron Beam in Germanium
- Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
- Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
- Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
- Photocurrent and Photoluminescence in InGaAs/GaAs Multiple Quantum Well Solar Cells
- Novel Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition : LATE NEWS
- Nondestructive Measurement of Minority Carrier Lifetimes in Si Wafers Using Frequency Dependence of ac Photovoltages
- Measurement of Minority Carrier Lifetimes using AC Photovoltages Excited by Two Photon Beams of Different Wavelengths
- A Non-Destructive Method for Measuring Lifetimes for Minority Carriers in Semiconductor Wafers Using Frequency-Dependent ac Photovoltages
- A Photovoltaic Method for Evaluating Junction Characteristics Using Cut-Off Frequency
- Silicon Solar Cells Fabricated by a New Ion Implantation Concept : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
- Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
- Ac Surface Photovoltages in p-Type Silicon Wafers Oxidized in Water-Free and Wet Ambients
- Ac Surface Photovoltages in Strongly-Inverted Oxidized p-Type Silicon Wafers^*
- Fine Chromium Grating Directly Made by Irradiating Electron Beam
- Determination of Surface Charge and Interface Trap Densities in Naturally Oxidized n-Type Si wafers Using ae Surface Photovoltages
- Sample Thickness Dependence of Minority Carrier Lifetimes Measured Using an ac Photovoltaic Method
- Frequency-Dependent Photovoltage-Generating Areas in a Strongly-Inverted Oxidized p-Type Silicon Wafer
- Electron Beam Enhanced Surface Photovoltage
- Excitation-Power-Density Dependent ac Surface Photovoltages in Radiation-Damaged Si Wafer
- Non-Destructive Method for Measuring Cut-Off Frequency of a p-n Junction with a Chopped Photon Beam
- Confirmation of Aluminum-Induced Negative Charge in Thermally Oxidized Silicon Wafers Using AC Surface Photovoltage Method
- Effect of Aluminum on Ac Surface Photovoltages in Thermally Oxidized n-Type Silicon Wafers
- Germanium and Silicon Film Growth by Low-Energy Ion Beam Deposition
- Change of Apparent Sensitivity of an Electron Resist Due to Backing Materials
- very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH_4-PH_3-H_2 Reactants for Bipolar Devices : Condensed Matter
- Characterization of Damaged Layer Using AC Surface Photovoltage in Silicon Wafers
- A Novel Method of Electron Beam Recording on a Si Wafer
- Contactless Measurement of Wafer Lifetime by Free Carrier Infrared Absorption : C-6: CHARACTERIZATION
- Fabrication and Properties of Silicon Solar Cells Using Squarely Shaped Crystals : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- Nondestructive Diagnostic Method Using AC Surface Photovoltage in Silicon Wafers Rinsed with Metal-Contaminated Water Solutions
- Confirmation of Aluminum-Induced Negative Charge in Native Silicon Dioxide
- Monitoring of Ultra-Trace Contaminants on Silicon Wafers for ULSI by a Novel Impurity Extraction and AC Surface Photovoltage Methods
- Observation of p-n Junctions with a Flying-Spot Scanner Using a Chopped Photon Beam
- Polycrystalline Indium Phosphide Solar Cells Fabricated on Molybdenum Substrates
- Microstructure of Polycrystalline Indium Phosphide Prepared by Chemical Vapor Deposition
- Analysis of ac Surface Photovoltages in a Depleted Oxidized p-Type Silicon Wafer
- Saturation of ac Surface Photovoltages due to Photocapacitances in a Strongly-Inverted Oxidized p-Type Silicon Wafer
- Analysis of Trapezoid Distortion due to Charge-Up in Electron Beam Recording
- Voltage Signal due to Electron-Beam-Induced Conductivity in Semiconductors
- Die Verteilung des durch einen Elektronenstrahl ionisierten Ionenstromes im Elektronenstrahl-Apparate
- Measurement of Potential Distribution in a Semiconductor Crystal with an Electron Beam
- Detection of Resistivity Striations in a Ge Crystal with an Electron Beam
- On the Voltage Induced by an Electron Beam in a Bulk Semiconductor Crystal
- A Scanning Electron Microscopic Method of Obtaining Electric Field Distributions Using Solid-State Models
- A Failure Analysis of a Gunn Diode with a Scanning Electron Microscope
- Frequency Response of the Strong Inversion Layer in a Silicon Wafer
- The Photovoltaic Observation of a Non-Conductive Layer due to BN Formed in a Boron Implanted Si Junction
- Analysis of ac Surface Photovoltages in Accumulation Region : Optical Properties of Condensed Matter
- Non-Destructive Method of Observing Inhomogeneities in p-n Junctions with a Chopped Photon Beam
- An Electron Beam Method of Measuring Resistivity Distribution in Semiconductors
- Measurement of Resistance by Means of Electron Beam -III-
- Measurement of Resistance by Means of Electron Beam -II-
- Bulk Electron Voltaic Effect
- A Very Low Electron Temperature Mercury Plasma
- Czochralski Growth of Square Silicon Single Crystals
- Density Distribution of a Mercury Plasma near an Anchored Cathode Spot
- Measurement of the Homogenity of a Semiconductor with an Electron Beam
- Formulation of Power Loss Equation for an Emitter with Dot Contacts and Proposal of an Improved Emitter Structure in Silicon Solar Cells
- AC Photovoltaic Images of Thermally Oxidized P-Type Silicon Wafers Contaminated with Metals
- Observations of Sand-Blasted Surface of Germanium with a Scanning Electron Microscope
- Effects of Dipping in an Aqueous Hydrofluoric Acid Solution before Oxidation on Minority Carrier Lifetimes in p-Type Silicon Wafers
- Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs
- Contribution of Thermal SiO2 Layers on Si Wafer Back Surfaces to Photoconductive Decay Time Measured with Microwave Reflection from Front Surfaces
- Low-Temperature Boron Gettering for Improving the Carrier Lifetime in Fe-Contaminated Bifacial Silicon Solar Cells with n+pp+ Back-Surface-Field Structure