Formulation of Power Loss Equation for an Emitter with Dot Contacts and Proposal of an Improved Emitter Structure in Silicon Solar Cells
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概要
- 論文の詳細を見る
A new two-dimensional emitter power-loss equation was formulated for a cell with a dot contact and verified numerically. Based on this formulation, the current crowding that occurs in two-dimensional geometry was evaluated. We propose a solar cell structure with line-shaped heavily diffused emitters under the dot contacts. The effectiveness of the proposed emitter geometry was verified by both calculation and measurement, and the formulation was found to be valid.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-08-15
著者
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OHTSUKA Hiroyuki
Central Research Laboratory
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MURAMATSU Shin-ichi
Central Research Laboratory
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SAKAMOTO Masahiko
Hitachi ULSI Engineering Co., Ltd.
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UEMATSU Tsuyoshi
Central Research Laboratory
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WARABISAKO Terunori
Central Research Laboratory
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Nagata Yasushi
Hitachi Device Engineering Co. Ltd.
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Tsutsui Ken
Central Research Laboratory Hitachi Lid.
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Muramatsu Shin-ichi
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185, Japan
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Warabisako Terunori
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185, Japan
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Uematsu Tsuyoshi
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185, Japan
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Sakamoto Masahiko
Hitachi ULSI Engineering Co., Ltd., 5-20-1 Josui-Honcho, Kodaira, Tokyo 187, Japan
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Ohtsuka Hiroyuki
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185, Japan
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Nagata Yasushi
Hitachi Device Engineering Co., Ltd., 3681 Hayano, Mobara, Chiba 297, Japan
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