Formulation of Power Loss Equation for an Emitter with Dot Contacts and Proposal of an Improved Emitter Structure in silicon Solar Cells

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-08-15

著者

• Nagata Y

  Riken Saitama Jpn

• OHTSUKA Hiroyuki

  Central Research Laboratory

• MURAMATSU Shin-ichi

  Central Research Laboratory

• NAGATA Yasushi

  Hitachi Device Engineering Co., Ltd.

• SAKAMOTO Masahiko

  Hitachi ULSI Engineering Co., Ltd.

• TSUTUI Ken

  Central Research Laboratory

• UEMATSU Tsuyoshi

  Central Research Laboratory

• WARABISAKO Terunori

  Central Research Laboratory

• Ohtsuka H

  Ntt Telecommunications Energy Lab. Ibaraki Jpn

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• Formulation of Power Loss Equation for an Emitter with Dot Contacts and Proposal of an Improved Emitter Structure in silicon Solar Cells
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• Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
• Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
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• very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH_4-PH_3-H_2 Reactants for Bipolar Devices : Condensed Matter
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• Contactless Measurement of Wafer Lifetime by Free Carrier Infrared Absorption : C-6: CHARACTERIZATION
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• Formulation of Power Loss Equation for an Emitter with Dot Contacts and Proposal of an Improved Emitter Structure in Silicon Solar Cells
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