Reduction of Gap State Density in a-SiGe:H Alloys
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-08-15
著者
-
Shimada Toshikazu
Electronics Research Laboratory Nissan Motor Co. Ltd.
-
Watanabe Teruo
Futaba Corporation
-
Watanabe T
Components Development Group Sony Corporation
-
Watanabe T
Ritsumeikan Univ. Shiga Jpn
-
Watanabe Tetsu
Components Development Group Sony Corporation
-
Watanabe T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
-
Watanabe Toshihide
Atr Adaptive Communications Research Laboratories:(present Address)science And Technical Research La
-
SHIMADA Toshikazu
Central Research Laboratory, Hitachi Ltd.
-
MURAMATSU Shin-ichi
Central Research Laboratory
-
Muramatsu S
Univ. Tokyo Tokyo Jpn
-
MATSUBARA Sunao
Central Research Laboratory, Hitachi Ltd.
-
WATANABE Takeshi
Production Engineering Research Laboratory, Hitachi, Ltd.
-
TSUZUKU Susumu
Production Engineering Research Laboratory, Hitachi, Ltd.
-
Matsubara Sunao
Central Research Laboraotry
-
Shimada T
Presto Japan Science And Technology Corporation (jst) And Department Of Chemistry The University Of
-
Tsuzuku Susumu
Production Engineering Research Laboratory Hitachi Ltd.
-
Muramatsu S
Hitachi Cable Ltd. Ibaraki Jpn
-
Shimada Toshikazu
Central Research Laboratory
関連論文
- New Structure Disk for a Magneto-Optical Composite Head System : Head Technology
- New Structure Disk for a Magneto-Optical Composite Head System
- A Magneto-Optical Recording Method of Magnetic Field Modulation with Pulsed Laser Irradiation : DRIVE TECHNOLOGY II
- Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
- Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
- Relationship between Electrical Resistivity and Electrostatic Force of Alumina Electrostatic Chuck
- Multiphonon Raman Scattering Enhanced by Resonance with Band Gap A_g Luminescence State in Trans-Polyacetylene
- Blurring and Broadening of Reflection Spectra Due to Structural and Alignment Changes of Conjugated Chains Caused by Isomerization and Stretching in Trans-Polyacetylene
- Luminescence and Multiphonon Raman Scattering Excited at Exciton-Forming Vibronic Absorption Subbands in Trans-Polyacetylene
- Photocurrent Excitation Spectra Observed with An-Al Heteroelectrodes Biased Reversely and Reflection Spectra in Trans-Polyacetylene
- Preparation of a-Si_N_x:H Film Using N_2 Microwave Afterglow Chemical Vapor Deposition Method
- Generation Mechanism of Tensile Stress in a-Si_N_x Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- Residual Stress of a-Si_N_x:H Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- High-Intensity Vacuum Ultraviolet Light Source in Windowless Photochemical Vapor Deposition Reactor and Its Application to a-Si:H Deposition
- Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
- Influence of RF Power on Properties of a-Si_Ge_x:H Prepared by RF Glow Discharge Decomposition
- Two Components of Light-Induced Photoconductivity Decays in a-Si:H
- Fabrication of a New Multilayered Amorphous Silicon Photoreceptor Drum by Glow Discharge Method
- Formulation of Power Loss Equation for an Emitter with Dot Contacts and Proposal of an Improved Emitter Structure in silicon Solar Cells
- Effects of Electrode Geometry on Breakdown Voltage of a Single-Gap Pseudospark Discharge
- Room-Temperature Operation of a Lateral Tunneling Transistor Fabricated by Plane-Dependent Silicon Doping in Nonplanar Epitaxy
- Effects of Electrode Geometry and Gas Pressure on Breakdown Voltage of a Pseudospark Discharge
- Crystal and Electrical Characterizations of Oriented Yttria-Stabilized Zirconia Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistor
- Thermal Properties of Various Ta Precursors Used in Chemical Vapor Deposition of Tantalum Pentoxide
- Interaction of PbTiO_3 Films with Si Substrate ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Effect of Atomic and Molecular Hydrogen Irradiation on Ge Surface Segregation during Si Molecular Beam Epitaxy
- c-Axis-Oriented Pb(Zr, Ti)O_3 Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method
- Preparation of Tetragonal Perovskite Single Phase PbTiO_3 Film Using an Improved Metal-Organic Chemical Vapor Deposition Method Alternately Introdueing Pb and Ti Precursors
- Microstructure of Visible Light Emitting Porous Silicon
- Persistent Spectral Hole-Burning in Semi-Crystalline Matrices Doped with Tetraphenylporphine
- Fine Structure of Porous Si with Visible Photoluminescence
- Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
- Reduction of Gap State Density in a-SiGe:H Alloys
- Tantalum Oxide Films Formed by UV Photo-CVD Using Ozone and TaCl_5
- Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
- Gap States in a-SiGe:H Examined by the Constant Photocurrent Method
- Fast and Efficient Photon-Gated Burning of Persistent Spectral Holes in Donor-Acceptor Electron Transfer Systems
- Photochemical Hole Burning in Highly Doped TPP/PMMA Systems. Energy Migration and Stabilization of Burnt Holes for Subsequent Hole-Burnings : FUTURE TECHNOLOGY
- Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
- Medium-Range Order of Amorphous Silicon Germanium Alloys : Small-Angle X-Ray Scattering Study
- Influence of Deposition Conditions on Properties of a-SiGe:H Prepared by Microwave-Excited Plasma CVD : Condensed Matter
- Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
- Microwave-Excited Plasma CVD of a-Si:H Films Utilizing a Hydrogen Plasma Stream or by Direct Excitation of Silane
- Chemical Vapor Deposition of a-SiGe:H Films Utilizing a Microwave-Excited Plasma
- Chemical Vapor Deposition of a-Si:H Films Utilizing a Microwave Excited Ar Plasma Stream
- Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
- Electroluminescence from Lateral P-N Junctions Grown on (111)A GaAs Patterned Substrates
- Low Resistance NiAuGe/Au Ohmic Contacts on N-Type (111)A GaAs
- Demonstration of Lateral p-n Subband Junctions in Si Delta-Doped Quantum Welts on (111)A Patterned Substrates
- Low Diffusivity of Dopants in (111)A GaAs
- Misorientation Dependernce of Crystal Structures and Electrical Properties of Si-Doped AlAs Grown on (111)A GaAs by Molecular Beam Epitaxy
- Substrate Misorientation Effects on Silicon-Doped AlGaAs Layers Grown on GaAs(111)A by Molecular Beam Epitaxy
- Lateral P-N Subband Junctions Fabricated on Patterned Substrates
- Estimation of the Surface State Density of N-Type (111)A GaAs Grown Using Molecular Beam Epitaxy
- Error Propagation due to Dust On a Thin-Substrate Disk : Drive Technology
- Error Propagation due to Dust on a Thin-Substrate Disk
- Applying an Objective Lens of 0.7-Numerical Aperture to a Center-Aperture-Detection Type of Magnetically Induced Superresolution Disk
- Infrared Spectra of Amorphous Silicon-Fluorine Alloys Prepared by Sputtering in Fluorosilane-Argon Gas Mixture
- Novel Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition : LATE NEWS
- Evaluation of a 120mm Sized Magneto optical Disk System of Over 6 GB Capacity
- Evaluation of Double-Layered Magnetic Recording Medium Composed of Perpendicular and Longitudinal Anisotropy Layers
- Photoassisted Electrochemical Deposition of Copper from a Bathocuproin Complex
- Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
- Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
- Perpendicular Magnetic Recording Performance with Ring-Type Heads for Electroless-Plated CoNiReP/NiFeP Double-Layered Media
- Spontaneous Formation of Nanostructures in In_xGa_As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-oriented Substrates
- Spontaneous Formation of Nanostructures in In_xGa_As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-Oriented Substrates
- Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time-Resolved Photoluminescence Spectroscopy
- Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time Resolved Photoluminescence Spectroscopy
- Quantum-Confined Stark Shift Due to Piezoelectric Effect in InGaAs/GaAs Quantum Wells Growrn on (111)A GaAs
- Influence of the Piezoelectric Effect on the Energy Levels of InGaAs/GaAs Strained Quantum Wells Grown on (311)A GaAs
- Vanishing of Negative Differential Resistance Region Due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
- Valence Band Modulation in InGaAs/InAlAs Superlattices with Tensilely Strained Wells Grown on InGaAs Quasi-Substrate on GaAs
- Growth and Characterization of Vertical-Cavity Surface-Emitting Lasers Grown on (311)A-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Stark Ladder Photoluminescence of X States in GaAs/AlAs Type-I Superlattices
- Stopping Cross-Sections of Rare Gases in Amorphous Silicon for MeV Energy Helium Ions
- Fabrication and Characterization of Comb-Shaped Lateral Field-Emitter Arrays
- Low-Operation-Voltage Comb-Shaped Field Emitter Array
- Molecular Beam Epitaxy of SnSe_2 : Chemistry and Electronic Properties of Interfaces
- RHEED Intensity Oscillation during Epitaxial Growth of Layered Materials
- Control of Optical Gap in a-Si_xC_: H Alloy Films Produced by Reactive Sputtering Method : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
- very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH_4-PH_3-H_2 Reactants for Bipolar Devices : Condensed Matter
- GaAs_P_x Light Emitting Diodes Produced by Zn Ion Implantation. : I. Dose Dependence of Properties of Implanted Diodes
- Fabrication and Properties of Silicon Solar Cells Using Squarely Shaped Crystals : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- On the Phase Transition-Like Structure Change of Disordered Lattice State of GaP (Selected Topics in Semiconductor Physics) -- (Impurity and Disordered States)
- GaAs_P_x Light Emitting Diodes Produced by Zn Ion Implantation. : II. Photoluminescence of p-Type Layers Formed by Ion Implantation and Diffusion
- XPS Determination of Amount of Incorporated Rare Gas in Amorphous Silicon Films Produced with Reactive Sputtering Method
- Observation of Si-2p Level Shift in Hydrogenated Amorphous Silicon by X-Ray Photoelectron Spectroscopy
- Observation of p-n Junctions with a Flying-Spot Scanner Using a Chopped Photon Beam
- Polycrystalline Indium Phosphide Solar Cells Fabricated on Molybdenum Substrates
- Microstructure of Polycrystalline Indium Phosphide Prepared by Chemical Vapor Deposition
- The Effect of Nonuniform Doping Density on Electron States in n-Type Si Inversion Layers
- Non-Destructive Method of Observing Inhomogeneities in p-n Junctions with a Chopped Photon Beam
- Czochralski Growth of Square Silicon Single Crystals
- Formulation of Power Loss Equation for an Emitter with Dot Contacts and Proposal of an Improved Emitter Structure in Silicon Solar Cells
- Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs