RHEED Intensity Oscillation during Epitaxial Growth of Layered Materials
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概要
- 論文の詳細を見る
Diffracted beam intensities in reflection high energy electron diffraction (RHEED) have been observed to oscillate during the epitaxial growth of NbSe_2 and MoSe_2 on GaAs(111) substrates. This is the first observation of RHEED oscillation in layered materials, to the author's knowledge. Monolayer- and bilayer-mode oscillations have been observed at different diffraction points. The existence of the bilayer-mode oscillation leads to the determination of the polytype of the grown films. It has also been shown that the antiphase portion of the grown film is considerably small.
- 社団法人応用物理学会の論文
- 1990-11-20
著者
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KOMA Atsushi
Department of Chemistry, The University of Tokyo
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SAIKI Koichiro
Department of Chemistry, The University of Tokyo
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SHIMADA Toshihiro
Department of Chemistry, Graduate School of Science, The University of Tokyo
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Shimada Toshikazu
Electronics Research Laboratory Nissan Motor Co. Ltd.
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YAMAMOTO Hideki
Department of Surgery, Tama-Nagayama Hospital, Nippon Medical School
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Yamamoto Hideki
Department Of Chemistry University Of Tokyo
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Yamamoto Hideki
Deparment Of Toxicology Faculty Of Veterinary Medicine Hokkaido University
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Saiki Koichiro
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Shimada T
Presto Japan Science And Technology Corporation (jst) And Department Of Chemistry The University Of
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Shimada Toshihiro
Department Of Chemistry School Of Science The University Of Tokyo
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Koma Atsushi
Department Of Applied Physics University Of Tokyo
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