Oriented Growth of Sexithiophene Induced by Edge of Metal Electrodes
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概要
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Recently it has been shown that the “graphoepitaxy” of organic semiconductor $\alpha$-sexithiophene (6T) occurs on artificial periodic grooves fabricated on thermally-oxidized Si substrates. In the present study, similarly oriented growth of 6T thin films was found around the edge of metal electrodes. Using this phenomenon to realize single crystalline organic transistors, substrates with short channel Au electrodes were fabricated by photolithography, and 6T films were grown on these substrates by molecular beam deposition. The {010} planes of 6T crystals tended to face the wall of the channel (electrode edge), probably due to the chemical affinity of Au for S atoms in 6T molecules. The transistor characteristics of the test device were measured, and the results suggested that this orientation control technique using the shape of electrodes would lead to improvements in device performance.
- 2010-04-25
著者
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Saiki Koichiro
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Wada Yasuo
Graduate School Of Interdisciplinary New Science Toyo University
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Ikeda Susumu
Department Of Applied Chemistry Faculty Of Science And Engineering Saga University
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Koichiro Saiki
Department of Complexity Science and Engineering, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Susumu Ikeda
Department of Earth and Planetary Materials Science, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan
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