Fabrication of GaAs quantum dots on a bilayer-GaSe terminated Si(111) substrate

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概要

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• We have developed a novel method to fabricate self-assembled quantum dots (QDs) of compound semiconductors on a Si(111) substrate using the so-called 'droplet epitaxy' technique. In order to fabricate QDs on a Si substrate by droplet epitaxy, we examined the termination of a Si (111) surface with a bilayer-GaSe. This surface is formed by depositing I monolayer Ga on a Si(111)-7x7 surface and annealing in a Se flux at 520 degreesC. Then Ga atoms are deposited to form Ga droplets on this surface, and the sample is annealed in an As flux to transform Ga droplets into GaAs QDs. It is revealed that GaAs QDs with a diameter as small as 10 nm and a height of 5 nm can be formed on the bilayer-GaSe/Si(111) substrate at a maximum density of 8.4 x 10(10) cm(-2). Using this method a new technique will be available to fabricate QDs of many kinds of compound semiconductors on the Si(111) substrate.

• 2001-03-30

著者

• Saiki Koichiro

  Department Of Applied Physics Faculty Of Engineering The University Of Tokyo

• Ueno Keiji

  Department Of Chemistry Faculty Of Engineering Gunma University

• Koma Atsushi

  Department Of Applied Physics University Of Tokyo

• Ueno Keiji

  Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

• Saiki Koichiro

  Department of Complexity Science and Engineering, Graduate School of Frontier Sciences, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

• Koma Atsushi

  Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

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