Electron Double Resonance of Ionized Impurity-Pairs in Silicon. I

概要

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Electron double resonance experiments were made at 4.2°K and 1.3°K for the ionized impurity-pairs in n- and p-type silicon containing 1.1〜16.2 × 10^<16>cm^<-3> impurities. The frequencies of the signal and the pump microwaves were 〓9Gc and 〓22Gc, respectively. The change in the absorption of the 9Gc microwave was measured as the magnetic field was swept. In n-type samples two peaks were observed in the electron double resonance: the one at 4.4kOe corresponds to a decrease in absorption and the other at 11.4kOe to an increase in absorption. Each of these peaks splits into two if the pumping is strong enough. These peaks were observed in Sb- and As-doped samples, but not in P-doped samples. In p-type samples two broad peaks were observed at 4.6kOe and at 11.5kOe, both corresponding to decreases in the 9Gc absorption. The structure of the ionized donor- and acceptor-pairs are discussed and compared with the Takeyama et al.'s calculations. The saturation characteristic of the resonance peak in p-type samples is analysed using the simplified three-level model. The experiments using 23Gc and 51Gc microwaves were also made.
社団法人日本物理学会の論文
1967-01-05