Scanning Tunneling Microscopy and Spectroscopy Study of LiBr/Si(001) Heterostructure
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概要
- 論文の詳細を見る
LiBr/Si(001) heterostructure has been investigated by scanning tunneling microscopy and spectroscopy (STM and STS). In the initial stage of LiBr growth, rectangular islands are observed consisting of accumulation of about 0.2 nm-thick unit layers. The STM results indicate that LiBr grows on Si(001) in a single layer fashion. The STS measurement shows a wide band gap region in $I$-$V$ curve and the energy gap of the LiBr film shows no thickness dependence down to a nominal thickness of 1.2 monolayer (ML).
- Japan Society of Applied Physicsの論文
- 2004-02-01
著者
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Saiki Koichiro
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Ueno Keiji
Department Of Chemistry Faculty Of Engineering Gunma University
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Koma Atsushi
Department Of Applied Physics University Of Tokyo
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Katayama Masao
Department Of Chemical System Engineering The University Of Tokyo
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Kiguchi Manabu
Department Of Chemistry Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Koma Atsushi
Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
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